Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-29T07:24:57.916Z Has data issue: false hasContentIssue false
  • English
  • Français

Mechanism of Narrow Line Effect in TiSi2 films on highly As-Doped Diffusion Layers

Published online by Cambridge University Press:  10 February 2011

Koichi Ishida ,
Hitoshi Wakabayashi  and
Tohru Mogami
Koichi Ishida
Affiliation:
Si Systems Research Labs., NEC Corporation, Tsukuba, Japan
Hitoshi Wakabayashi
Affiliation:
Si Systems Research Labs., NEC Corporation, Sagamihara, Japan
Tohru Mogami
Affiliation:
Si Systems Research Labs., NEC Corporation, Sagamihara, Japan
Get access

Abstract

The mechanism of the narrow line effect in TiSi2, films on highly As-doped diffusion layers is studied by TEM observation of grains in the TiSi2. The narrow line effect is shown to be due to an enlargement of the TiSi2, grain size caused by regrowth of the pre-amorphized regions before the start of silicidation. Knocked-on oxygen from the SiO2 cover layers is found to delay the onset of the silicidation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 207
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Beyers, R. and Sinclair, R., J. Appl. Phys. 57, 524 (1985).10.1063/1.335263Google Scholar
[2] Lasky, J.B., Nakos, J.S., Cain, O.J. and Geiss, P.J., IEEE Trans. Electron Device, ED–38, 262 (1991).10.1109/16.69904Google Scholar
[3] Ma, Z. and Allen, L.H., Phys. Rev. B 49, 13501 (1994).10.1103/PhysRevB.49.13501Google Scholar
[4] Sakai, I., Abiko, H., Kawaguchi, H., Hirayama, T., Johansson, L.E.G. and Okabe, K., VLSI Symp. Dig. 66 (1992).Google Scholar
[5] Fujii, K., Kikuta, K. and Kikkawa, T., VLSI Symp. Dig. 57 (1995).Google Scholar
[6] Park, H.K., Sachitano, J., McPherson, M., Yamaguchi, T. and Lehman, G., J. Vac. Sci. Techno. A 2, 264 (1984).10.1116/1.572576Google Scholar
[7] Beyers, R., Coulman, D. and Merchant, P., J. Appl. Phys. 61, 5110 (1987).Google Scholar
[8] Kotaki, H., Takegawa, Y, Mori, Y, Mitsuhashi, K. and Takagi, J., Jpn. J. Appl. Phys. 33, 532 (1994).Google Scholar
[9] Kitanno, T., Kodama, N., Sakai, T. and Saito, S., Jpn. J Appl. Phys. 35, 591(1996).10.1143/JJAP.35.591Google Scholar