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Mechanical Scaling Trends and Methods to Improve Reliability of Packaged Interconnect Structures

Published online by Cambridge University Press:  31 January 2011

Michael Lane ,
Abigail Roush  and
Stephen E. Callahan
Michael Lane
Affiliation:
[email protected], Emory & Henry College, Chemistry Department, PO Box 947, Emory, Virginia, 24327, United States
Abigail Roush
Affiliation:
[email protected], Emory & Henry College, Chemistry Department, Emory, Virginia, United States
Stephen E. Callahan
Affiliation:
[email protected], Emory & Henry College, Chemistry Department, Emory, Virginia, United States
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Abstract

Low dielectric constant (low-k) materials are currently being incorporated into advanced microelectronic devices to improve or maintain performance. As the dielectric constant is reduced, so are its mechanical properties. These reduced properties have recently been related to chip-package interaction (CPI) failures. Significant effort has focused on eliminating CPI failures through engineering of copper crackstop structures. However, published data suggests that crackstop engineering needs to occur at each technology node to ensure CPI reliability. In this study, the focus is on repairing interfacial delaminations with chemistry specific coupling agents rather than attempting to stop them with a specially designed crackstop structure. Critical adhesion values and corrosion resistance of the repaired interfaces are compared to the original interface. The application of the repair chemistry in an integrated structure is discussed along with the potential impact on reliability.

Keywords

adhesionfracturecorrosion
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1158: Symposium F – Packaging, Chip-Package Interactions and Solder Materials Challenges , 2009 , 1158-F01-01
Copyright
Copyright © Materials Research Society 2009

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References

1 Lane, M. Shaw, T. M. Liu, X. H. and Liniger, E. G. IEEE Transactions on Device and Materials Reliability, 4, 142–147 (2004).Google Scholar
2 Grill, A. Edelstein, D. Lane, M. Patel, V., Gates, S. Restaino, D. and Molis, S. J. Appl. Phys. 103, 054104 (2008); DOI:10.1063/1.2844483.Google Scholar
3 Liu, X.H. et al. , Proc. Of Int. Interconnect Tech. Conf. 2007, p. 13–15.Google Scholar
4 Sankaran, S. et al. , Proc of Int. Interconnect Tech. Conf. 2006, p. 187–190.Google Scholar
5 Lane, M.W. Proc. Of the 31st Annual Meeting of The Adhesion Society 2008, p. 352–4.Google Scholar
6 Lane, M. W. Dauskardt, R. H. Vainchtein, A. Gao, H. J. Mater. Res., 15, 2758–69 (2000).Google Scholar
7 Wiederhorn, S. M. J. Amer. Ceram. Soc., 50, 407–414 (1967).Google Scholar
8 Lawn, B. R. Mater. Sci. Eng., 13, 277–283, (1974).Google Scholar
9 Krishnamoorthy, A. Chanda, K. Murarka, S. P. Ramanath, G. and Ryan, J. G. Appl. Phys. Lett. 78, 17, 2467 (2001).Google Scholar
10 Ganesan, P. G. Gamba, J. Ellis, A. Kane, R. S. and Ramanath, G. Appl. Phys. Lett. 83, 16, 3302–3305 (2003).Google Scholar
11 Ganesan, P. G. Singh, A. P. and Ramanath, G. Appl. Phys. Lett. 85, 3, (2004).Google Scholar
12 Ramanath, G. Cui, G. Ganesan, P. G. Guo, X. Ellis, A. Stukowski, M. Vijayamohanan, K. Doppelt, P. and Lane, M. Appl. Phys. Lett. 83, 2, 383–385 (2003).Google Scholar
13 Arkles, B. CHEMTECH, 7, 766, (1977).Google Scholar
14 Dauskardt, RH, Lane, M. W. Ma, Q. Krishna, N.; Eng. Fract. Mech., 61, 141–62, (1998).Google Scholar
15 Lane, M. W. Snodgrass, J. M. Dauskardt, R. H. Microelectron. Reliab. 41, 1615–24 (2001).Google Scholar