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Measurement of the Electric Potential on Amorphous Silicon and Amorphous Silicon Germanium Alloy Thin-Film Solar Cells by Scanning Kelvin Probe Microscopy

Published online by Cambridge University Press:  21 March 2011

C.-S. Jiang ,
H. R. Moutinho ,
Q. Wang ,
M. M. Al-Jassim ,
B. Yan ,
J. Yang  and
S. Guha
C.-S. Jiang
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
H. R. Moutinho
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Q. Wang
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
M. M. Al-Jassim
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
B. Yan
Affiliation:
United Solar Ovonic Corporation, Troy, MI 48084
J. Yang
Affiliation:
United Solar Ovonic Corporation, Troy, MI 48084
S. Guha
Affiliation:
United Solar Ovonic Corporation, Troy, MI 48084
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Abstract

We report on direct measurements of surface potentials on cross sections of a-Si:H and a-SiGe:H n-i-p solar cells using scanning Kelvin probe microscopy. External bias voltage (Vb)induced changes in the electric field distributions in the i layer were further deduced by taking the derivative of the Vb-induced potential changes. This procedure avoids the effect of surface charges or surface Fermi-level pinning on the potential measurement. We found that the electric field does not distribute uniformly through the i layer of a-Si:H cells, but it is stronger in the regions near the n and p layers than in the middle of the i layer. The non-uniformity is reduced by incorporating buffer layers at the n/i and i/p interfaces in the a-Si:H solar cells. For a-SiGe:H solar cells, the electric field at the p side of the i layer is much stronger than at the n side and the middle. The non-uniformity becomes more severe when a profiled Ge content is incorporated with a high Ge content on the p side. We speculate that the increase in defect density with increasing of Ge content causes charge accumulation at the i/p interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A9.42
Copyright
Copyright © Materials Research Society 2004

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References

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