No CrossRef data available.
Published online by Cambridge University Press: 28 February 2011
Epitaxial SiGe buffers have been formed by the implantation of 74Ge+ ions into Si(100)4° to <011> substrates. The implants were made at 150keV to a dose of 1×1017 /cm2 . The epitaxial layers were characterized by Rutherford backscattering, Raman spectroscopy, and electroreflectance and were found to be 300Å thick having on average a composition of Si0 . 35 Ge0.65. GaAs layers were then grown on these substrates by molecular beam epitaxy, using the standard two-step growth process. The results from Auger, Scanning Electron Microscopy, and Cross-sectional TEM indicate a lower defect production and propagation in these samples, compared to those grown directly on Si.