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Mbe Growth and Characterization of GaAs thin Films on SiGe Buffer Layers

Published online by Cambridge University Press:  28 February 2011

S.M. Prokes ,
W.F. Tseng ,
B.R. Wilkins ,
H. Dietrich  and
A. Christou
S.M. Prokes
Affiliation:
ONT/NRL Post-Doctoral Fellow
W.F. Tseng
Affiliation:
Naval Research Laboratory, Washington, DC 20375–5000
B.R. Wilkins
Affiliation:
Naval Research Laboratory, Washington, DC 20375–5000
H. Dietrich
Affiliation:
Naval Research Laboratory, Washington, DC 20375–5000
A. Christou
Affiliation:
Naval Research Laboratory, Washington, DC 20375–5000
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Abstract

Epitaxial SiGe buffers have been formed by the implantation of 74Ge+ ions into Si(100)4° to <011> substrates. The implants were made at 150keV to a dose of 1×1017 /cm2 . The epitaxial layers were characterized by Rutherford backscattering, Raman spectroscopy, and electroreflectance and were found to be 300Å thick having on average a composition of Si0 . 35 Ge0.65. GaAs layers were then grown on these substrates by molecular beam epitaxy, using the standard two-step growth process. The results from Auger, Scanning Electron Microscopy, and Cross-sectional TEM indicate a lower defect production and propagation in these samples, compared to those grown directly on Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 167
Copyright
Copyright © Materials Research Society 1988

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