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Materials Aspects of GaAs on Si

Published online by Cambridge University Press:  28 February 2011

Russ Fischer
Russ Fischer*
Affiliation:
At&T Bell Laboratories600 Mountain Avenue Murray Hill,NJ 07974
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Summary abstract

Despite the 4.2% lattice mismatch, several laboratories have demonstrated that the quality of GaAs grown on Si is high enough for practical device applications [1–5]. At the GaAs/Si interface, a dislocation density of roughly 1012cm−2 is required to accommodate the mismatch. Therefore various techniques of dislocation filtering are necessary to provide material with acceptable dislocation counts. Among these techniques are the use of tilted substrates, strained layer superlattices, and intermediate layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 141
Copyright
Copyright © Materials Research Society 1987

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References

1. Fischer, R., Chand, N., Kopp, W., Peng, C. K., Morkoc, H., Gleason, K. R. and Scheitlin, D., “A dc and Microwave Comparison of GaAs MESFETs Grown on GaAs and Si Substrates,” IEEE Trans. Electron Dev., vol. ED–33, pp. 206–213, 1986.Google Scholar
2. Metze, G. M., Choi, H. K. and Tsaur, B.-Y., “Metal Semiconductor Field Effect Transistors Fabricated in GaAs Layers Grown Directly on Si Substrates by Molecular Beam Epitaxy,” Appl. Phys. Lett., vol. 45, pp. 1107–1109, 1984.Google Scholar
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4. Fischer, R., Chand, N., Kopp, W., Morkoc, H., Erickson, L. P. and Youngman, R., “GaAs Bipolar Transistors Grown on (100) Si Substrates by Molecular Beam Epitaxy,” Appl. Phys. Lett., vol. 47, pp. 397–399, 1985.Google Scholar
5. Chand, N., People, R., Baiocchi, F.A., Wecht, K.W. and Cho, A.Y., “Significant Improvement in Crystalline Quality of MBE Grown GaAs on Si (100) by Rapid Thermal Annealing,” Appl. Phys. Lett., vol. 49, pp. 815–817, 1986.Google Scholar