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Material Characterization and Chemical-Mechanical Polishing of Low-Dielectric Constant Fluorinated Silicon Dioxide Films

Published online by Cambridge University Press:  15 February 2011

Wei-Tsu Tseng ,
Charles C.F. Lin ,
Yuan-Tsu Hsieh  and
M.-S. Feng
Wei-Tsu Tseng
Affiliation:
National Nano Device Laboratory, 1001-1 Ta-Hsueh Road, Hsinchu 300, TAIWAN
Charles C.F. Lin
Affiliation:
Winbond Electronics Corporation, Science-Based Industrial Park, Hsinchu, TAIWAN Institute of Materials Science and Engineering, National Chiao-Tung University, TAIWAN
Yuan-Tsu Hsieh
Affiliation:
Institute of Materials Science and Engineering, National Chiao-Tung University, TAIWAN
M.-S. Feng
Affiliation:
Institute of Materials Science and Engineering, National Chiao-Tung University, TAIWAN
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Abstract

Nanohardness, modulus, and bonding structure of fluorinated silicon dioxides are characterized in order to evaluate their correlations with chemical-mechanical polishing (CM[P) performance. Alkaline-based slurry with adjusted pH is used for polishing in an attempt to delineate the chemical erosion from mechanical abrasion effects during CMIP of fluorinated oxides. The increase in CMIP removal rate and the reduction in refractive index with increasing fluorine content in the fluorinated oxides are related to the change in bonding configuration. The enhanced moisture absorption is due to the presence of fluorine in the oxide network.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 441
Copyright
Copyright © Materials Research Society 1996

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References

1. Homma, T., Yamaguchi, R. and Murao, Y., J. Electrochem. Soc. 140, 687 (1993).Google Scholar
2. Usami, T., Shimokawa, K. and Yoshimaru, M., Jpn. J. Appl. Phys. 33, 408 (1994).Google Scholar
3. Hsieh, Y.-T., Tseng, W.-T., Dai, B.-T., Chang, T.-C., Mei, Y.-J., Sheu, J.-D., Lin, C.-F., Feng, M.-S. and Yung, H.-J., DUMIC Conf. Proc. 2, p. 287 (1996).Google Scholar
4. Oliver, W. C. and Pharr, G. M., J. Mater. Res. 7, 1564 (1992).Google Scholar
5. Preston, F., J. Soc. Glass Tech. 11, 214 (1927).Google Scholar
6. Liu, C.-W., Dai, B.-T. and Yeh, C.-F., J. Electrochem. Soc. 142, 3098 (1995).Google Scholar
7. Liu, C.-W., Dai, B.-T., Tseng, W.-T. and Yeh, C.-F., J. Electrochem. Soc. 143, 716 (1996).Google Scholar