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A Main Factor Determining the Uniform Step Coverage in Chemical Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

Chee Burm Shin  and
Gyeong Soon Hwang
Chee Burm Shin
Affiliation:
Dept. of Chemical Engineering, Ajou University, Suwon 442-749, Korea
Gyeong Soon Hwang
Affiliation:
Div. of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, CA 91125
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Abstract

Profile evolution simulations during chemical vapor deposition based on a 2-D continuum model reveal that the type of surface kinetics plays an important role as a measure of determining step coverage of films deposited in a high aspect ratio trench or via. The linear surface kinetics, resulting from adsorption rate limitation, is found to be difficult to bring about conformal step coverage in a deep narrow trench without reducing the growth rate considerably; that is, under such a condition void free filling can not be achievable with holding an appropriate growth rate. High tendency of the precursor for chemical equilibrium on a surface, tending to cause the non-linear surface kinetics by surface reaction limitation, is mainly responsible for the significant improvement of step coverage in TEOS-based depositions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 369
Copyright
Copyright © Materials Research Society 1998

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References

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