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LS-MOCVD of BSTO Thin Films Using Novel Ba and Sr Precursors

Published online by Cambridge University Press:  01 February 2011

Hyun Goo Kwon ,
Youngwoo Oh ,
Jung Woo Park ,
Young Kuk Lee ,
Chang Gyoun Kim  and
Yunsoo Kim
Hyun Goo Kwon
Affiliation:
Thin Film Materials Laboratory, Advanced Materials Division, Korea Research Institute of Chemical Technology, Daejeon 305-600, Korea
Youngwoo Oh
Affiliation:
Thin Film Materials Laboratory, Advanced Materials Division, Korea Research Institute of Chemical Technology, Daejeon 305-600, Korea
Jung Woo Park
Affiliation:
Thin Film Materials Laboratory, Advanced Materials Division, Korea Research Institute of Chemical Technology, Daejeon 305-600, Korea
Young Kuk Lee
Affiliation:
Thin Film Materials Laboratory, Advanced Materials Division, Korea Research Institute of Chemical Technology, Daejeon 305-600, Korea
Chang Gyoun Kim
Affiliation:
Thin Film Materials Laboratory, Advanced Materials Division, Korea Research Institute of Chemical Technology, Daejeon 305-600, Korea
Yunsoo Kim
Affiliation:
Thin Film Materials Laboratory, Advanced Materials Division, Korea Research Institute of Chemical Technology, Daejeon 305-600, Korea
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Abstract

We report the synthesis of new precursors Ba(thd)2(tmeea) and Sr(thd)2(tmeea), where tmeea = tris[2-(2-methoxyethoxy)ethyl]amine, and the LS-MOCVD of barium strontium titanate (BSTO) thin films using these precursors. Thin films of BSTO were grown on Pt(111)/SiO2/Si(100) substrates by LS-MOCVD using the cocktail source consisting of the conventional Ti precursor Ti(thd)2(OiPr)2 and the new Ba and Sr precursors. As-grown films were characterized by SEM, XRD, XRF, and C-V measurement. BSTO films grown at 420°C were stoichiometric barium strontium titanate with very smooth surface morphology and their dielectric constants were found to be as large as 320. The dependence of composition, microstructure and the electrical properties of the BSTO films on the growth temperature, annealing temperature, and working pressure will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 765: Symposium D – CMOS Front-End Materials and Process Technology , 2003 , D3.22
Copyright
Copyright © Materials Research Society 2003

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