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Low-Temperature Photoluminescence of Mocvd GaAs Grown Directly on Si

Published online by Cambridge University Press:  28 February 2011

B.A. Wilson ,
Carl E. Bonner ,
T. D. Harris ,
M. G. Lamont ,
R. C. Miller ,
S. K. Sputz ,
S. M. Vernon ,
V. E. Haven ,
R. M. Lum  and
J. K. Klingert
B.A. Wilson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Carl E. Bonner
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
T. D. Harris
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
M. G. Lamont
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R. C. Miller
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. K. Sputz
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. M. Vernon
Affiliation:
Spire Corporation, Bedford, MA 01730
V. E. Haven
Affiliation:
Spire Corporation, Bedford, MA 01730
R. M. Lum
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733
J. K. Klingert
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733
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Abstract

We present a systematic study of the low-temperature photoluminescence from undoped GaAs layers grown directly on Si substrates by MOCVD. GaAs layers from 100Å to 4 μm in thickness were deposited on Si substrates prepared with a variety of doping levels and orientations. The emission from thicker samples is dominated by pairs of lines in the band-edge region. Photoluminescence excitation measurements show that this multiplicity results from two regions in the material with different levels of strain. The stress-induced splitting of the valence band is also studied using excitation spectroscopy. In thinner samples we observe strong emission in the midgap range due to stoichiometric defects. The nature of the defects near the interface depends strongly on the character of the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 255
Copyright
Copyright © Materials Research Society 1987

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References

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