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Low-damage Preparation of SiO2 Dielectric Thin Film by the Photo-assisted Oxidation Processing

Published online by Cambridge University Press:  15 July 2011

Takehito Kodzasa ,
Sei Uemura ,
Kouji Suemori ,
Manabu Yoshida ,
Satoshi Hoshino ,
Noriyuki Takada  and
Toshihide Kamata
Takehito Kodzasa
Affiliation:
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, JAPAN.
Sei Uemura
Affiliation:
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, JAPAN.
Kouji Suemori
Affiliation:
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, JAPAN.
Manabu Yoshida
Affiliation:
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, JAPAN.
Satoshi Hoshino
Affiliation:
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, JAPAN.
Noriyuki Takada
Affiliation:
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, JAPAN.
Toshihide Kamata
Affiliation:
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, JAPAN.
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Abstract

We have already reported that low-temperature (about 170 °C) preparation technique of silicon dioxide (SiO2) dielectric thin film that has high resistivity and extremely smooth surface by the photo oxidation process. In this paper, we have developed a low-damage preparation technique to fabricate a SiO2 thin film by the photo-assisted low temperature oxidation process in order to apply this process to the flexible electronics using for convenient plastic films. We have reported that the SiO2 dielectric thin film with a high insulation performance can be prepared by the low temperature processing below 100°C by improving the pre-processing of the photo oxidation of thin film.

Keywords

dielectricoxidesolution deposition
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1287: Symposium F – Low-Temperature-Processed Thin-Film Transistors , 2011 , mrsf10-1287-f02-07
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Kodzasa, T., et al. IDW’06 Proceedings, 881–884 (2006).Google Scholar
2. Kodzasa, T., et al. Abstruct of 2006 MRS Spring Meeting.Google Scholar
3. Kodzasa, T., et al. Mater. Res. Soc. Symp. Proc. Vol. 1196, C04–04 (2010).Google Scholar
4. Uemura, S., et al. Mater. Res. Soc. Symp. Proc. Vol. 1113, F09–25 (2009).Google Scholar