Hostname: page-component-cd9895bd7-gxg78 Total loading time: 0 Render date: 2024-12-27T01:55:42.400Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Temperature Growth of Nanocrystalline Silicon From SiF4 + SiH4

Published online by Cambridge University Press:  10 February 2011

Yu Chen ,
M. Taguchi  and
S. Wagner
Yu Chen
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, New Jersey 08544
M. Taguchi
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, New Jersey 08544
S. Wagner
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, New Jersey 08544
Get access

Abstract

The electrical conductivity of nc-Si films grown from SiF4 and H2 with constant arsenic doping rises from 10-5 to 10 Scm-1 as the thickness rises from ˜ 0.1 to 1 μm. This variation demonstrates the strong influence of film structure on conductivity. We show that the conductivity of undoped nc-Si films of constant thickness can be varied by adding SiH4 to the SiF4 and H2 source gas.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 103
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Meier, J., Fliickiger, R., Keppner, H. and Shah, A., Appl. Phys. Lett. 65, 860 (1994).Google Scholar
2. Meier, J., Dubail, S., Fltickiger, R., Fischer, D., Keppner, H. and Shah, A., in Conf. Record 1994 IEEE 1 st World Conf. Photovoltaic Energy Cony., Waikoloa, Hawaii, December 5–9, 1994. (IEEE, Piscataway, NJ 1994), p. 409.Google Scholar
3. Nagahara, T., Fujimoto, K., Kohno, N., Kashiwagi, Y. and Kakinoki, H., Jpn. J. Appl. Phys. 31, 4555 (1992).Google Scholar
4. Jang, J., Lim, H.J. and Ryu, B.Y., in Soc. Info. Display Internat Symp. Digest vol. XXVI, (SID, Santa Ana, CA 1995), p. 325.Google Scholar
5. Nakata, M., PhD thesis, Tokyo Institute of Technology, Department of Electronic Chemistry, March 1992.Google Scholar
6. Cullity, B.D., Elements of X-ray diffraction, Addison-Wesley, Reading, MA, 1967, p. 99.Google Scholar