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Low Temperature (<150°C) Doping Techniques for Polysilicon TFT's

Published online by Cambridge University Press:  21 March 2011

W.S. Hong ,
J.M. Kim ,
S.H. Han ,
Y.H. Lee ,
Y.W. Kim ,
S.H. Lee  and
D.Y. Kim
W.S. Hong
Affiliation:
Dept. of Electronics Engineering, Sejong University, Seoul, Korea
J.M. Kim
Affiliation:
Dept. of Electronics Engineering, Sejong University, Seoul, Korea
S.H. Han
Affiliation:
Plasma Application Group, Korea Institute of Science and Technology, Seoul, Korea
Y.H. Lee
Affiliation:
Plasma Application Group, Korea Institute of Science and Technology, Seoul, Korea
Y.W. Kim
Affiliation:
Plasma Application Group, Korea Institute of Science and Technology, Seoul, Korea
S.H. Lee
Affiliation:
Dept. of Electronics Engineering, Sejong University, Seoul, Korea
D.Y. Kim
Affiliation:
Materials and Devices Lab., Samsung Advanced Institute of Technology, Yongin-city, Kyunggi-do, Korea
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Abstract

Doping of polysilicon (poly-Si) films was performed at a low temperature (<150°C), by using three different dopant incorporation methods: ion shower, dopant layer deposition and plasma immersion. All three techniques were shown to be capable of obtaining sheet resistance values that were smaller than 104 Ω/sq., which were considered to be sufficient to form good source-drain contacts. Also, a sheet resistance value that is as low as 300 Ω/sq. was demonstrated. It was found that the laser energy used for dopant activation was the major parameter to control the sheet resistance of the poly-Si films. The lowest attainable sheet resistance was not affected much by the ion dose, as long as the initial dose is higher than 1015 cm−2. The plasma immersion method was shown to be a good alternative to the ion shower, as the doping could be performed in a relatively short time without causing a structural damage to the poly-Si film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A4.15
Copyright
Copyright © Materials Research Society 2004

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References

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