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Low Resistivity Transparent Indium Tin Oxide (Ito) Films Sputtered At Room Temperature With H2O Addition

Published online by Cambridge University Press:  10 February 2011

Ken-Ichi Onisawa ,
Etsuko Nishimura ,
Masahiko Ando ,
Takeshi Satou ,
Masaru Takabatake*  and
Tetsuroh Minemura
Ken-Ichi Onisawa
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd. 7-1-1 Omika-cho, Hitachi-shi, Ibaraki-ken, 319-12, Japan
Etsuko Nishimura
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd. 7-1-1 Omika-cho, Hitachi-shi, Ibaraki-ken, 319-12, Japan
Masahiko Ando
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd. 7-1-1 Omika-cho, Hitachi-shi, Ibaraki-ken, 319-12, Japan
Takeshi Satou
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd. 7-1-1 Omika-cho, Hitachi-shi, Ibaraki-ken, 319-12, Japan
Masaru Takabatake*
Affiliation:
Electron Tube & Devices Division, Hitachi, Ltd. 3300 Hayano, Mobara-shi, Chiba-ken, 297, Japan
Tetsuroh Minemura
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd. 7-1-1 Omika-cho, Hitachi-shi, Ibaraki-ken, 319-12, Japan
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Abstract

A new kind of amorphous indium tin oxide (ITO) film with good pattern delineation properties and mass production capability, as well as low resistivity and high transparency has been developed. The film was prepared by a cluster-type DC magnetron sputtering apparatus at room temperature with H2O addition to the argon sputtering gas. The amorphous ITO film quality was improved by effective termination of oxygen vacancies with -OH species generated by enhanced decomposition from the added H2O in the plasma.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 341
Copyright
Copyright © Materials Research Society 1997

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References

1. Ishibashi, S., Higuchi, Y., Ota, Y., and Nakamura, K., J. Vac. Sci. Technol. A8, 1399 (1990).Google Scholar
2. Kitahara, H., Uchida, T., Atsumi, M., Kaida, Y., and Ichikawa, K., Proc. 1st Int. Symp. on Sputtering and Plasma Processes, Tokyo, 1991, p. 149.Google Scholar
3. Ando, M., Takabatake, M., Nishimura, E., Leblanc, F., Onisawa, K., Minemura, T., Proc. 16th Int. Conf. of Amorphous Semiconductors, Kobe, 1995, p.385; also to be published in J. Noncrystalline Solids, 1996.Google Scholar
4. Nishimura, E., Ando, M., Onisawa, K., Takabatake, M., Minemura, T., to be published in Jap. J. Appl. Phys. May(1996).Google Scholar
5. Kostlin, H., Jost, R., and Lems, W., Phys. Status Solidi (a)29 (1975)87.Google Scholar
6. Bellingham, J. R., Philips, W. A., and Adkins, C. J., Thin Solid Films, 195(1991)23.Google Scholar