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Localized Measurement of Strains in Damascene Copper Interconnects by Convergent-Beam Electron Diffraction

Published online by Cambridge University Press:  17 March 2011

Julie A. Nucci ,
Robert R. Keller ,
Stephan Krämer ,
Cynthia A. Volkert  and
Mihal E. Gross
Julie A. Nucci
Affiliation:
Max-Planck-Institut für Metallforschung, Seestraße 92, D-70174 Stuttgart, GERMANY
Robert R. Keller
Affiliation:
N.I.S.T. Materials Reliability Division, 325 Broadway, Boulder, CO 80303, U.S.A
Stephan Krämer
Affiliation:
Max-Planck-Institut für Metallforschung, Seestraße 92, D-70174 Stuttgart, GERMANY
Cynthia A. Volkert
Affiliation:
Max-Planck-Institut für Metallforschung, Seestraße 92, D-70174 Stuttgart, GERMANY
Mihal E. Gross
Affiliation:
Bell Labs, Lucent Technologies, Murray Hill, NJ 07974, U.S.A
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Abstract

Convergent beam electron diffraction (CBED) was used to measure localized lattice strains in damascene copper interconnects. This method provides data from areas of approximate diameter 20 nm, enabling evaluation of strain states within individual grains. Lattice parameters were determined by measuring the deficient higher order Laue zone (HOLZ) line positions in experimental zone axis patterns and subsequently comparing them to kinematical and dynamical simulations. Quantitative comparison was accomplished using a least squares analysis of distances between line intersections. Deposition-induced strains between 0.06% and 0.14% were measured in 2.0 µm wide lines. The uncertainty in strain determination was approximately 0.02%, as limited by the precision in HOLZ line detection. In addition to enabling localized analysis of strain states, another advantage of using CBED is that the microstructure can be fully evaluated. Used in conjunction with global methods such as X-ray diffraction, CBED may provide unique insight into localized failure phenomena such as electromigration void formation in damascene copper.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D8.5.1
Copyright
Copyright © Materials Research Society 2000

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