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Lateral Distribution of Electrons Trapped in Nitride Layers

Published online by Cambridge University Press:  01 February 2011

M. Lorenzini ,
M. Rosmeulen ,
L. Breuil ,
L. Haspeslagh ,
J. Van Houdt  and
K. De Meyer
M. Lorenzini
Affiliation:
IMEC—Interuniversity Microelectronics Center, Kapeldreef 75, 3001 Leuven, Belgium
M. Rosmeulen
Affiliation:
IMEC—Interuniversity Microelectronics Center, Kapeldreef 75, 3001 Leuven, Belgium Katholieke Universiteit Leuven, Kasteelpark Arenberg 10, 3001 Leuven, Belgium
L. Breuil
Affiliation:
IMEC—Interuniversity Microelectronics Center, Kapeldreef 75, 3001 Leuven, Belgium
L. Haspeslagh
Affiliation:
IMEC—Interuniversity Microelectronics Center, Kapeldreef 75, 3001 Leuven, Belgium
J. Van Houdt
Affiliation:
IMEC—Interuniversity Microelectronics Center, Kapeldreef 75, 3001 Leuven, Belgium
K. De Meyer
Affiliation:
IMEC—Interuniversity Microelectronics Center, Kapeldreef 75, 3001 Leuven, Belgium Katholieke Universiteit Leuven, Kasteelpark Arenberg 10, 3001 Leuven, Belgium
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Abstract

The recent advent of nitride-based localized charge-trapping storage has raised much interest in the lateral characterization of the trapped charge distribution, which is fundamental in defining scalability and retention properties. A direct characterization technique based on amplitude-sweep charge-pumping measurements is exploited here to investigate the lateral distribution of trapped electrons along the channel length. Further, the technique is applied to monitor the charge redistribution in time at high temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 830: Symposium D – Materials and Processes for Nonvolatile Memories , 2004 , D1.3
Copyright
Copyright © Materials Research Society 2005

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References

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