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Kinetics of UV/O2 Cleaning and Surface Passivation: Experiments and Modeling

Published online by Cambridge University Press:  25 February 2011

Satish Bedge ,
Joseph McFadyen  and
H. Henry Lamb
Satish Bedge
Affiliation:
North Carolina State UniversityDepartment of Chemical Engineering Raleigh, NC 27695-7905
Joseph McFadyen
Affiliation:
North Carolina State UniversityDepartment of Chemical Engineering Raleigh, NC 27695-7905
H. Henry Lamb
Affiliation:
North Carolina State UniversityDepartment of Chemical Engineering Raleigh, NC 27695-7905
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Abstract

Removal of adsorbed organic contaminants from Si surfaces by reaction with molecular O3 and photo-generated atomic oxygen species in a UHV-compatible photochemical reactor was investigated. Treatment of contaminated wafers with externally generated O3 at 25°C was effective in removing adsorbed organics, but surface cleaning rates were enhanced by simultaneous 254-nm UV irradiation of the reactor contents. In situ photo-generation of O3 and atomic oxygen species by 185- and 254-nm irradiation of O2 gave comparable results. A simplified gas-phase kinetics model describing O3 generation by a low-pressure Hg lamp was developed and used to gain insight into the effects of relative humidity and O2 partial pressure on steady-state O3 concentrations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 207
Copyright
Copyright © Materials Research Society 1992

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References

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