Hostname: page-component-cd9895bd7-8ctnn Total loading time: 0 Render date: 2024-12-27T01:57:25.116Z Has data issue: false hasContentIssue false
  • English
  • Français

Kinetic Modelling Of The Selective Epitaxy Of GaAs On Patterned Substrates By Hvpe. Application to the Conformal Growth Of Low Defect Density GaAs Layers On Silicon

Published online by Cambridge University Press:  10 February 2011

E. Gil-Lafon ,
J. Napierala ,
D. Castelluci ,
A. Pimpinelli ,
B. Gérard  and
D. Pribat
E. Gil-Lafon
Affiliation:
LASMEA UMR CNRS 6602, Université Blaise Pascal, Les Cézeaux, 63177 AUBIERE Cedex, France, [email protected]
J. Napierala
Affiliation:
LASMEA UMR CNRS 6602, Université Blaise Pascal, Les Cézeaux, 63177 AUBIERE Cedex, France, [email protected]
D. Castelluci
Affiliation:
LASMEA UMR CNRS 6602, Université Blaise Pascal, Les Cézeaux, 63177 AUBIERE Cedex, France, [email protected]
A. Pimpinelli
Affiliation:
LASMEA UMR CNRS 6602, Université Blaise Pascal, Les Cézeaux, 63177 AUBIERE Cedex, France, [email protected]
B. Gérard
Affiliation:
THOMSON-CSF Laboratoire Central de Recherches, Domaine de Corbeville, 91404 ORSAY Cedex, France
D. Pribat
Affiliation:
THOMSON-CSF Laboratoire Central de Recherches, Domaine de Corbeville, 91404 ORSAY Cedex, France
Get access

Abstract

The selective growth of GaAs by HVPE was studied on (001), (110), (111)Ga and (111)As, GaAs patterned substrates by varying the I1I/V ratio. A kinetic modelling of the growth was developed, based upon the SEM observations of the growth morphologies as well as on experimental curve synthesis. The growth rate is written as a function of the diffusion fluxes of the adsorbed AsGa and AsGaCI molecules and takes into account the chlorine desorption by H2. 1.5 μm thick GaAs films were then fabricated on Si (001) by a confined epitaxial lateral overgrowth technique. These conformal films exhibit intense and uniform luminescence signals, showing that the dislocation densities of GaAs are lower than 105 cm−2. SEM analyses reveal that conformal growth fronts consist in (110) and (111)As A planes under the III/V ratios (superior to 1) which were tested.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 535: Symposium D/I – III-V and IV-IV Materials & Processing Challenges for Highly… , 1998 , 33
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Fang, S.F. et al., J. Appl. Phys. 68 (7), R31 (1990).Google Scholar
2. Papers on this subject have been published in MRS Symposium Proceedings 67, 91, 116, 198.Google Scholar
3. Shaw, D. W., J. Electrochem. Soc. 115, 405 (1968); J. Electrochem. Soc. 117, 683 (1970).Google Scholar
4. Hollan, L. and Durand, J.M., J. Crystal Growth 46, 665 (1979).Google Scholar
5. Hollan, L., Durand, J.M. and Cadoret, R., J. Electrochem. Soc. 124, 135 (1977).Google Scholar
6. Gil-Lafon, E., to be published.Google Scholar
7. Cadoret, R. and Gil-Lafon, E., J. Phys. I France 7, 889 (1997).Google Scholar
8. Pribat, D., Gérard, B., Dupuy, M. and Legagneux, P., Appl. Phys. Lett. 60, 2144 (1992).Google Scholar
9. Gérard, B., Marcadet, X., Etienne, P. et al., presented at the 1998 MRS Fall Meeting, Boston, 1998.Google Scholar