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Ion Channeling Studies of CdTe Films on GaAs

Published online by Cambridge University Press:  22 February 2011

Barry Wilkens
Barry Wilkens*
Affiliation:
Bellcore, Red Bank, NJ Ahmet Erbil, Georgia Institute of Technology, Atlanta, Georgia
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Abstract

Thin films of [111] oriented CdTe have been MOCVD grown onto [111] GaAs substrates. When thicknesses exceed 1000Å the epitaxy is quite good (backscattering minimum yield of approximately 15%) in spite of a 14% lattice mismatch. A narrowing of the Cd angular scan suggests a displacement of some of the Cd atoms in the lattice. A model based on a Te vacancy is presented to describe the data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 130: Symposium C – Thin Films: Stresses and Mechanical Properties I , 1988 , 25
Copyright
Copyright © Materials Research Society 1989

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References

1. Ponce, F. et.al Surf. Sci. 16, 564 (1986)CrossRefGoogle Scholar