Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-25T18:03:14.024Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigation on the Thermal and Electrical Properties of Ti-Si-O Film Formed by the Composite Sputtering Deposition

Published online by Cambridge University Press:  21 March 2011

Akira Nishiyama ,
Akio Kaneko ,
Masato Koyama ,
Yoshiki Kamata ,
Ikuo Fujiwara ,
Masahiro Koike ,
Masahiko Yoshiki  and
Mitsuo Koike
Akira Nishiyama
Affiliation:
Advanced LSI Technology Laboratory and Environmental Engineering and Analysis Center, Toshiba Corporation 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
Akio Kaneko
Affiliation:
Advanced LSI Technology Laboratory and Environmental Engineering and Analysis Center, Toshiba Corporation 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
Masato Koyama
Affiliation:
Advanced LSI Technology Laboratory and Environmental Engineering and Analysis Center, Toshiba Corporation 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
Yoshiki Kamata
Affiliation:
Advanced LSI Technology Laboratory and Environmental Engineering and Analysis Center, Toshiba Corporation 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
Ikuo Fujiwara
Affiliation:
Advanced LSI Technology Laboratory and Environmental Engineering and Analysis Center, Toshiba Corporation 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
Masahiro Koike
Affiliation:
Advanced LSI Technology Laboratory and Environmental Engineering and Analysis Center, Toshiba Corporation 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
Masahiko Yoshiki
Affiliation:
Environmental Engineering and Analysis Center, Toshiba Corporation 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
Mitsuo Koike
Affiliation:
Environmental Engineering and Analysis Center, Toshiba Corporation 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
Get access

Abstract

Ti-Si-O films were sputter deposited from TiO2+SiO2 composite targets with various SiO2 content. The phase separation occurred for every SiO2 content used in this experiment (from 14% to 75%) and it has been revealed that nanocrystalline (TiO2)1-x(SiO2)x films in which anatase TiO2 forms tiny grains were obtained when x in the film is larger than 0.26. The tiny grain was effective for suppressing the thermal grooving phenomenon of the thin films by the post deposition annealing which leads to the leakage current increase. The dielectric constant of the nanocrystalline film was varied with the SiO2 content from the value of the bulk anatase to SiO2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 670: Symposium K – Gate Stack and Sillicide Issues in Silicon , 2001 , K4.8
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Joshi, P.C. and Cole, M. W., J. Appl. Phys. 86, 871(1999).Google Scholar
2. Campbell, S.A., Gilmer, D.C., Wang, X.C., Hsieh, M.T., Kim, H.S., Gladfelter, W.L. and Yan, J., IEEE Trans. Electron Devices, 44, 104 (1997).Google Scholar
3. Ma, Y., Ono, Y., Stecker, L., Evans, D.R. and Hsu, S.T., Tech. Dig. Int. Electron Device Meet. 1999, 149.Google Scholar
4. Lee, B.H., Kang, L., Qi, W. J., Nieh, R., Jeon, Y., Ohnishi, K. and Lee, J.C., Tech. Dig. Int. Electron Device Meet. 1999, 133.Google Scholar
5. Kingon, A.I., Maria, J.P. and Streiffer, S.K., Nature 406, 1032 (2000).Google Scholar
6. Shulte, H., Busch, B., Sayan, S., Gustafsson, T. and Garfunkel, E., Proc. MRS Workshop on High-k Gate Dielectrics, June 1-2, 2000, 33.Google Scholar
7. Nolan, T., Sinclair, R. and Beyers, R., J. Appl. Phys. 71, 720(1992).Google Scholar
8. Sun, W.T., Lee, H.M., Liaw, M.C. and Hsu, C.C.H., Jpn.J. Appl. Phys., 37, 5854 (1998).Google Scholar
9. Tung, R.T., Appl.Phys.Lett. 72, 2538 (1998).Google Scholar
10. Ogawa, S., Yoshida, T., Kouzaki, T., Okuda, S. and Tsukamoto, K., Appl. Surf. Sci. 41/42, 290 (1989).Google Scholar
11. Nishiyama, A., Akasaka, Y., Ushiku, Y., Hishioka, K., Suizu, Y. and Shiozaki, M., Jpn. J. Appl. Phys., Part1, 36, 3639 (1997).Google Scholar
12. Gonzalez, R.J., Phys. Rev. B 55, 7014 (1997).Google Scholar
13. Dover, R.B. van, Proc. MRS Workshop on High-k Gate Dielectrics, June 1-2, 2000, 33.Google Scholar