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Investigation of Titanium Silicide Formation Using Secondary Ion Mass Spectrometry

Published online by Cambridge University Press:  22 February 2011

Andrew T.S. Wee ,
Alfred C.H. Huan ,
W.H. Thian ,
K.L. Tan  and
Royston Hogan
Andrew T.S. Wee
Affiliation:
National University of Singapore, Department of Physics, Kent Ridge, S 0511, Singapore
Alfred C.H. Huan
Affiliation:
National University of Singapore, Department of Physics, Kent Ridge, S 0511, Singapore
W.H. Thian
Affiliation:
National University of Singapore, Department of Physics, Kent Ridge, S 0511, Singapore
K.L. Tan
Affiliation:
National University of Singapore, Department of Physics, Kent Ridge, S 0511, Singapore
Royston Hogan
Affiliation:
Chartered Semiconductor Manufacturing Pte Ltd, 2 Science Park Drive, S 0511, Singapore
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Abstract

Secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS) are used to investigate Ti silicide formation mechanisms on a series of Ti on Si thin films annealed in ultrahigh vacuum (UHV) at different temperatures and durations. The competition between oxygen diffusion and the silicide formation reaction (the socalled “snowplough” effect) is observed directly, as well as a Ti-Si-O layer. The results from these controlled experiments are compared with those from Ti silicide films formed under rapid thermal annealing (RTA) conditions in a production furnace, with and without a TiW barrier layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 117
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

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