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Investigation of Resistive Switching at SrRuO3/Cr-doped SrZrO3/Metal Junctions

Published online by Cambridge University Press:  01 February 2011

Hwan-Soo Lee
Hwan-Soo Lee*
Affiliation:
[email protected], Carnegie Mellon University, Electrical and Computer Engineering, 5000 Forbes Ave. Data Storage Systems Center REH 232, Pittsburgh, PA, 15213, United States, 1-412-268-4034
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Abstract

We have investigated charge transport properties with current perpendicular to the plane across the interface between a Cr-doped SrZrO3 perovskite oxide film and different top electrode metals. The measured resistance showed a wide variation depending on the top electrode metal, and suggested the interfacial properties with respect to contacting electrode metal kinds are responsible for the change in I-V characteristics (IVCs). The observed I-V curves were modeled with the equation I(V) = aV+bV2, where the variation of a was related to the work function of the metal whereas the variation of b was related to the oxygen affinity of the metal, consistent with space charge limited conduction through a defected interface. Additionally, the resistive switching was attributed to a change in both the a and the b coefficients. We speculate that voltage (or current) induced vacancy motion can account for a change in trap density in the oxide near the metallic electrical contact, and thus trapping or detrapping of charge carriers, showing the conductivity modulation across the junction.

Keywords

memorydefectsdevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I04-04
Copyright
Copyright © Materials Research Society 2007

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References

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