Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-23T11:01:13.380Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigation of Resistance Switching Properties in Undoped and Indium Doped SrTiO3 Thin Films Prepared by Pulsed Laser Deposition

Published online by Cambridge University Press:  31 January 2011

Xiaomin Li
Xiaomin Li*
Affiliation:
[email protected], Shanghai Institute of Ceramics, Chinese Academy of Sciences, State Key Laboratory of High Performance Ceramics & Superfine Microstructure, 1295 Ding Xi Road,, Shanghai, 200050, China
Get access

Abstract

In this paper, the undoped SrTiO3 (STO) and Indium doped STO (SrTi1-xInxO3: STIO) thin films were grown on Pt/Ti/SiO2/Si substrates by pulsed laser deposition with low substrate temperature. For undoped STO film, the influences of the forming processes on their resistive switching properties were studied by current and voltage controlled I-V sweeps, respectively. An obvious current controlled negative differential conductance phenomenon was found in both polarities of the electrical field. However, for low Indium doped STIO (x=0.1), the filament related resistance switching was observed in both the current and voltage I-V sweeps. And for high Indium doped STIO (x=0.2), a resistance switching with a reverse direction change to that in undoped STO can be obtained by a proper forming process. Based on these results, the reversible change of the Schottky like barrier at the grain boundary by the migration of oxygen vacancies were proposed to interpret the mechanism of the resistance switching.

Keywords

laser ablationmemorygrain boundaries
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1160: Symposium H – Materials and Physics for Nonvolatile Memories , 2009 , 1160-H11-01
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Meijer, G. I., Science 319, 1625 (2008).Google Scholar
2 Sawa, A., Materials today 11, 28 (2008).Google Scholar
3 Waser, R., and Aono, M., Nature Materials 6, 833 (2007).Google Scholar
4 Liu, S. Q., Wu, N. J. and Ignatiev, A., Appl. Phys. Lett. 76, 2749 (2000).Google Scholar
5 Ouyang, J. Y., Chu, C. W., Szmanda, C. R., Ma, L. P. and Yang, Y., Nature Material 3, 4918 (2000).Google Scholar
6 Szot, K., Speier, W., Bihlmayer, G. and Waser, R., Nature Material 5, 312 (2006).Google Scholar
7 Park, C., Seo, Y., Jung, J. and Kim, D.–W., J. Appl. Phys. 103, 054106 (2008).Google Scholar
8 Ni, M. C., Guo, S. M., Tian, H. F., Zhao, Y.G., and Li, J. Q., Appl. Phys. Lett. 91, 183502 (2007).Google Scholar
9 Clarke, D. R., J. Am. Ceram. Soc. 82, 485 (1999).Google Scholar
10 Hirose, S., Nkayama, A., Niimi, H., Kageyama, K. and Takagi, H., J. Appl. Phys. 104, 053712 (2008).Google Scholar
11 Yu, Weidong, Li, Xiaomin, Zhang, Yiwen, Yang, Rui, Wang, Qun, and Chen, Lidong, Adv. Mater. Res. 66, 199 (2009).Google Scholar
12 Dearnaley, G., Stoneham, A.M. and Morgan, D.V., Rep. Prog. Phys. 33, 1129 (1970).Google Scholar
13 Waser, T., Baiatu, R. and Hardtl, K.H., J.Am.Ceram. Soc. 73, 1663 (1990).Google Scholar
14 Dai, Shouyu, Lu, Huibin, Chen, Fan, Chen, Zhenghao, Ren, Z. Y. and Ng, D. H. L., Appl. Phys. Lett. 80, 3545 (2002).Google Scholar