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Investigation of Electron Emission From Si and Hot Filament CVD Diamond

Published online by Cambridge University Press:  10 February 2011

J. Y. Shim
Affiliation:
Department of Metallurgical Engineering, Yonsei University, Seoul 120-749, Korea
E. J. Chi
Affiliation:
Department of Metallurgical Engineering, Yonsei University, Seoul 120-749, Korea
S. J. Rho
Affiliation:
Department of Metallurgical Engineering, Yonsei University, Seoul 120-749, Korea
H. K. Baik
Affiliation:
Department of Metallurgical Engineering, Yonsei University, Seoul 120-749, Korea
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Abstract

The field emission characteristics of the Si emitters and the diamond coated Si emitters are investigated. The Fowler-Nordheim plots of the two types of Si emitters show linear slopes. It means that the I-V characteristics follow the Fowler-Nordheim relation. Field emission for the two types of diamond coated Si emitters exhibits significant enhancement both in turn-on voltage and total emission current. The Raman spectrum shows that the high intensity graphite peak is observed with diamond peak and thereby large amounts of graphite may be included in the diamond grain boundary. It seems to be thought that the graphite participates in the low field emission. However, further investigations are needed to understand whether the graphite may enhance the emission characteristics of diamond or not.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

1. Himpsel, F. J., Knapp, I. A., Van Vechten, J. A. and Eastman, D. E., Phys. Rev., B 20, 624 (1979).Google Scholar
2. Asano, T., Maruta, T., Ishikura, T., and Yamashita, S., 8th Int. Vac. Microelectronics Conf. Portland, Oregon 283(1995).Google Scholar
3. Choi, W. B., Liu, J., McClure, M. T., Myers, A. F., Cuomo, J. J., and Hren, J. J., 8th Int. Vac. Microelectronics Conf. Portland, Oregon 315(1995).Google Scholar
4. Huang, Z.-H., Cultler, P. H., Miskovsky, N. M., and Sullivan, T. E., Appl. Phys. Lett. 65(20), 2562 (1994)Google Scholar
5. Wang, C., Garcia, A., Ingram, D. C., Lake, M., and Kordesch, M. E., Electron. Lett. 27(16), 1460 (1991).Google Scholar
6. Xu, N. S., Lantham, R. V., and Tzeng, Y., Electron. Lett. 29(18), 1596 (1993)/4.Google Scholar
7. Bajic, S. and Latham, R. V., 2th Int. Vac. Microelectronics Conf. IOP Publishing Ltd. 315(1995).Google Scholar
8. Bajic, S. and Latham, R. V., J. Phys. D. 21, 200(1988).Google Scholar
9. Zhirnov, V. V., Givargizov, E. I., and Plekhanov, P. S., J. Vac. Sci. Technol. B 13(2), 418(1995)Google Scholar
10. Zhu, W., Kochanski, G. P., Jin, S., and Seibles, L., J. Appl. Phys. 78(4), 2707 (1995).Google Scholar