Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-25T17:24:09.446Z Has data issue: false hasContentIssue false
  • English
  • Français

Interfacial Reactions of Copper/Refractory Alloy and Bilayer Films on Si02

Published online by Cambridge University Press:  25 February 2011

R. L. Spreitzer ,
S.A. Rafalski ,
D. Adams ,
S.W. Russell ,
Z. Atzmon ,
J. Li ,
T.L. Alford  and
J.W. Mayer
R. L. Spreitzer
Affiliation:
Arizona State University, Department of Chemical, Bio, and Materials Engineering, Tempe, AZ 85287-6006
S.A. Rafalski
Affiliation:
Arizona State University, Department of Chemical, Bio, and Materials Engineering, Tempe, AZ 85287-6006
D. Adams
Affiliation:
Arizona State University, Department of Chemical, Bio, and Materials Engineering, Tempe, AZ 85287-6006
S.W. Russell
Affiliation:
Arizona State University, Department of Chemical, Bio, and Materials Engineering, Tempe, AZ 85287-6006
Z. Atzmon
Affiliation:
Arizona State University, Department of Chemical, Bio, and Materials Engineering, Tempe, AZ 85287-6006
J. Li
Affiliation:
Arizona State University, Department of Chemical, Bio, and Materials Engineering, Tempe, AZ 85287-6006
T.L. Alford
Affiliation:
Arizona State University, Department of Chemical, Bio, and Materials Engineering, Tempe, AZ 85287-6006
J.W. Mayer
Affiliation:
Arizona State University, Department of Chemical, Bio, and Materials Engineering, Tempe, AZ 85287-6006 Arizona State University, Center for Solid State Science, Tempe, AZ 85287-1704
Get access

Abstract

We studied interfacial phase formation between copper and copper-alloy films on SiO2 in order to understand how to improve adhesion. CuCr and CuTi alloy and bilayer films on SiO2 were annealed from 400-600°C for 30 min in an N2 + H2 (5%) ambient. The bilayer systems exhibited refractory metal migration from the interface to the surface where they oxidized. In the CuTi bilayer system, an oxidized interfacial Ti layer was observed. Both CuCr and CuTi alloy systems exhibited refractory metal segregation to the interface and surface. Rutherford backscattering spectrometry and Auger electron spectroscopy were used for elemental depth profiling.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 631
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Russell, S.W., Li, J., Strane, J.W. and Mayer, J.W., Mater. Res. Soc. Symp. Proc. (1992).Google Scholar
2 Li, J., Colgan, E.G., Shacham-Diamand, Y. and Mayer, J.W., Proc. of VLSI Multilevel Interconnection Conf. (1991) 153.Google Scholar
3 Li, J., Shacham-Diamand, Y. and Mayer, J.W., Materials Science Reports, 9 (1992) 28.CrossRefGoogle Scholar