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Interface Characterization of Metals and Metal-nitrides to Phase Change Materials

Published online by Cambridge University Press:  28 June 2011

Deepu Roy ,
Dirk J. Gravesteijn  and
Rob A. M. Wolters
Deepu Roy
Affiliation:
NXP Semiconductors, High Tech Campus 4, 5656AE, Eindhoven, The Netherlands E-mail: [email protected], phone: +31(0)402726872.
Dirk J. Gravesteijn
Affiliation:
NXP Semiconductors, High Tech Campus 4, 5656AE, Eindhoven, The Netherlands E-mail: [email protected], phone: +31(0)402726872.
Rob A. M. Wolters
Affiliation:
NXP Semiconductors, High Tech Campus 4, 5656AE, Eindhoven, The Netherlands E-mail: [email protected], phone: +31(0)402726872. MESA+ Institute for Nanotechnology, University of Twente, Enschede, The Netherlands.
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Abstract

We have investigated the interfacial contact properties of the CMOS compatible electrode materials W, TiW, Ta, TaN and TiN to doped-Sb2Te phase change material (PCM). This interface is characterized both in the amorphous and in the crystalline state of the doped-Sb2Te. The electrical nature of the interface is characterized by contact resistance measurements and is expressed in terms of specific interfacial contact resistance (ρC). These measurements are performed on four-terminal Kelvin Resistor test structures. Knowledge of the ρC is useful for selection of the electrode in the integration and optimization of the phase change memory cells.

Keywords

memorycrystallineelectronic structure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1337: Symposium Q – New Functional Materials and Emerging Device Architectures for Nonvolatile Memories , 2011 , mrss11-1337-q03-02-r04-02
Copyright
Copyright © Materials Research Society 2011

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References

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