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The Intercorrelation Between Microstructure and Chemicalmechanical Polish of Metal Thin Films

Published online by Cambridge University Press:  10 February 2011

Wei-Tsu Tseng  and
Ying-Lang Wang
Wei-Tsu Tseng
Affiliation:
Department of Materials Science and Engineering, National Cheng-Kung University, 1 Ta-Hsueh Road, Tainan 701 TAIWAN, [email protected]
Ying-Lang Wang
Affiliation:
Taiwan Semiconductor Manufacturing Company, Hsinchu 300, Taiwan
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Abstract

The correlation between microstructures of Al and W metal thin films and their respective CMP performance is investigated. It is found that CMP removal rate decreases with increasing grain size. In both cases, the textures of the metal films are altered and their resistivity increased after CMP. The phenomenon is more pronounced for polish under a greater down force. The table speed, on the other hand, has only minimum effects on microstructure and resistivity. The possible underlying mechanisms leading to this phenomenon are proposed and their potential impacts on metallization reliability is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 459
Copyright
Copyright © Materials Research Society 1999

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