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Integration of Silicon and Diamond, Aluminum Nitride or Aluminum Oxide for Electronic Materials

Published online by Cambridge University Press:  10 February 2011

Stefan Bengtsson ,
Mats Bergh ,
Anders Söderbärg ,
Bengt Edholm ,
Jörgen Olsson ,
Per Ericsson  and
Stefan Tiensuu
Stefan Bengtsson
Affiliation:
Solid State Electronics Laboratory, Department of Microelectronics ED, Chalmers University of Technology, S-412 96 Göteborg, Sweden, [email protected]
Mats Bergh
Affiliation:
Solid State Electronics Laboratory, Department of Microelectronics ED, Chalmers University of Technology, S-412 96 Göteborg, Sweden, [email protected]
Anders Söderbärg
Affiliation:
Ericsson Components AB, S-164 81 Kista-Stockholm, Sweden
Bengt Edholm
Affiliation:
Ericsson Mobile Communication AB, Nya Vattentomet, S-221 83 Lund, Sweden
Jörgen Olsson
Affiliation:
Solid State Electronics, Ångström Laboratory, Uppsala University, Box 534, S-751 21 Uppsala, Sweden
Per Ericsson
Affiliation:
Ericsson Components AB, S-164 81 Kista-Stockholm, Sweden
Stefan Tiensuu
Affiliation:
Mitel Semiconductor AB, Box 520, S-175 26 Järfälla, Sweden
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Abstract

Material integration for the formation of advanced silicon-on-insulator materials by wafer bonding and etch-back will be discussed. Wafer bonding allows combining materials that may not be possible to grow on top of each other by any other technique. In our experiments, polycrystalline diamond, aluminum nitride or aluminum oxide films with thickness of 0.1-5 µm were deposited on silicon wafers. Bonding experiments were made with these films to bare silicon wafers with the goal of forming silicon-on-insulator structures with buried films of polycrystalline diamond, aluminum nitride or aluminum oxide. These silicon-on-insulator structures were aimed to address self-heating effects in conventional silicon-on-insulator materials with buried layers of silicon dioxide. The surfaces of the deposited diamond films were, by order of magnitude, too rough to allow direct bonding to a silicon wafer. In contrast the deposited aluminum nitride and aluminum oxide films did allow direct bonding to silicon. Bonding of the diamond surface to silicon was instead made through a deposited and polished layer of polycrystalline silicon on top of the diamond. In the case of the aluminum nitride electrostatic bonding was also demonstrated. Further, the compatibility of these insulators to silicon process technology was investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 535: Symposium D/I – III-V and IV-IV Materials & Processing Challenges for Highly… , 1998 , 133
Copyright
Copyright © Materials Research Society 1999

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References

1. Bengtsson, S., J. Electron. Mater. 21, 841 (1992)Google Scholar
2. Lasky, J.B., Appl. Phys. Lett. 48, 78 (1986)Google Scholar
3. Colinge, J.-P. inSilicon-On-Insulator Technology: Materials to VLSI, (Kluwer Academic Publishers, Dordrecht, 1991 )Google Scholar
4. Nakagawa, A., Watanabe, K., Yamaguchi, Y., Ohashi, H. and Furukawa, K., in 1986 IEDM Technical Digest (IEEE, New York, 1986) p. 122 Google Scholar
5. Xiao, Z. and Engstrdm, O. IEEE Trans. Electron. Dev. 44, 572 (1997)Google Scholar
6. Hjort, K., Ericson, F., Schweitz, J. Å., Hallin, C. and Janzdn, E., J. Electrochem. Soc. 141, 3242 (1994)Google Scholar
7. Bengtsson, S., Choumas, M., Maszara, W.P., Bergh, M., Olesen, C., Sbdervall, U. and Litwin, A., in Proc. 1994 IEEE SOS/SO1 Technology Conf., Nantucket Island 1994, (IEEE, New York, 1994) p. 35 Google Scholar
8. Bengtsson, S., Bergh, M., Choumas, M., Olesen, C. and Jeppson, K., Jpn. J. Appl. Phys. 35, 4175 (1996)Google Scholar
9. Ericsson, P., Bengtsson, S. and Skarp, J., Microelectronic Engineering 36, 91 (1997)Google Scholar
10. Ericsson, P. and Bengtsson, S., in Proc. of the 4th Int. Symp. on Semiconductor Wafer Bonding: Science, Technology and Applications, Paris 1997. The Electrochem. Soc. Proc. Series Vol.97-36, (The Electrochem. Soc., Pennington, 1997), p. 576Google Scholar
11. Bergh, M., Tiensuu, S. and Edholm, B., Manuscript, to be published (1998)Google Scholar
12. Maszara, W.P., Dockerty, R., Gondran, C.F.H. and Vasudev, P.K., in Silicon-on-insulator technology and devices VIII, Ed: S., Cristoloveanu, The Electrochem. Soc. Proc. Series Vol. 97–23, (The Electrochem. Soc., Pennington, 1997) p. 15 (1997)Google Scholar
13. Arnold, E., Pein, H. and Herko, S.P., in 1994 IEDM Technical Digest (IEEE, New York, 1994) p. 813 Google Scholar
14. Edholm, B., Sbderbdirg, A., Olsson, J. and Johansson, E., Jpn. J. Appl. Phys. 34, 4706 (1995)Google Scholar
15. Matsumoto, S., Sato, Y., Kamo, M., and Setaka, N., Jpn. J. Appl. Phys. 21, L183 (1982)Google Scholar
16. Suntola, T., in Handbook of Crystal Growth, Ed: D.T.J., Hurle (Elsevier Science, 1994)Google Scholar
17. Tokura, H., Yang, C.-F. and Yoshikawa, M., Thin Solid Films 212, 49 (1992)Google Scholar
18. Maszara, W.P., Goetz, G., Caviglia, A. and McKitterick, J.B., J. Appl. Phys. 64, 4943 (1988)Google Scholar
19. Wallis, G. and Pomerantz, D.T., J. Appl. Phys. 40, 3946 (1969)Google Scholar
20. Edholm, B., Soderbarg, A., and Bengtsson, S., J. Electrochem. Soc. 143, 1326 (1996)Google Scholar