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Integration of InGaN-based Optoelectronics with Dissimilar Substrates by Wafer Bonding and Laser Lift-off

Published online by Cambridge University Press:  21 March 2011

William S. Wong ,
Michael Kneissl ,
David W. Treat ,
Mark Teepe ,
Naoko Miyashita  and
Noble M. Johnson
William S. Wong
Affiliation:
XEROX Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304, USA
Michael Kneissl
Affiliation:
XEROX Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304, USA
David W. Treat
Affiliation:
XEROX Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304, USA
Mark Teepe
Affiliation:
XEROX Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304, USA
Naoko Miyashita
Affiliation:
XEROX Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304, USA
Noble M. Johnson
Affiliation:
XEROX Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304, USA
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Abstract

InGaN-based optoelectronics have been integrated with dissimilar substrate materials using a novel thin-film laser lift-off process. By employing the LLO process with wafer-bonding techniques, InGaN-based light emitting diodes (LEDs) have been integrated with Si substrates, forming vertically structured LEDs. The LLO process has also been employed to integrate InGaN-based laser diodes (LDs) with Cu and diamond substrates. Separation of InGaN-based thin-film devices from their typical sapphire growth substrates is accomplished using a pulsed excimer laser in the ultraviolet regime incident through the transparent substrate. Characterization of the LEDs and LDs before and after the sapphire substrate removal revealed no measurable degradation in device performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 681: Symposium I – Wafer Bonding and Thinning Techniques for Materials Integration , 2001 , I6.1
Copyright
Copyright © Materials Research Society 2001

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References

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