Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-20T06:39:24.579Z Has data issue: false hasContentIssue false
  • English
  • Français

Integrated Tribo-Chemical Modeling of Copper CMP

Published online by Cambridge University Press:  31 January 2011

Shantanu Tripathi ,
Seungchoun Choi ,
Fiona M. Doyle  and
David A. Dornfeld
Shantanu Tripathi
Affiliation:
[email protected], University of California, Mechanical Engineering, Berkeley, California, United States
Seungchoun Choi
Affiliation:
[email protected], University of California, Mechanical Engineering, Berkeley, California, United States
Fiona M. Doyle
Affiliation:
[email protected], University of California, Materials Science and Engineering, 210 Hearst Mining Bldg, Berkeley, California, 94720-1760, United States, 510-643-1666, 510-643-8653
David A. Dornfeld
Affiliation:
[email protected], University of California, Mechanical Engineering, Berkeley, California, United States
Get access

Abstract

Copper CMP is a corrosion-wear process, in which mechanical and chemical-electrochemical phenomena interact synergistically. Existing models generally treat copper CMP as a corrosion enhanced wear process. However, the underlying mechanisms suggest that copper CMP would be better modeled as a wear enhanced corrosion process, where intermittent asperity/abrasive action enhances the local oxidation rate, and is followed by time-dependent passivation of copper. In this work an integrated tribo-chemical model of material removal at the asperity/abrasive scale was developed. Abrasive and pad properties, process parameters, and slurry chemistry are all considered. Three important components of this model are the passivation kinetics of copper in CMP slurry chemicals; the mechanical response of protective films on copper; and the interaction frequency of copper with abrasives/pad asperities. The material removal rate during copper CMP was simulated using the tribo-chemical model, using input parameters obtained experimentally in accompanying research or from the literature.

Keywords

Cuoxidationpassivation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1157: Symposium E – Science and Technology of Chemical Mechanical Planarization (CMP) , 2009 , 1157-E02-03
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Zhang, T.C., Jiang, X.X., Li, S.Z., “Acceleration of corrosive wear of duplex stainless steel by H3PO4 solution” Wear 199 (1996). 253–259.Google Scholar
2 Ein-Eli, Y., Starosvetsky, D., “Review on copper chemical–mechanical polishing (CMP) andpost-CMP cleaning in ultra large system integrated (ULSI)—An electrochemical perspective,” Electrochimica Acta, 52, (2007) 1825–1838 Google Scholar
3 Xu, G., Liang, H., Zhao, J., Li, Y., “Investigation of Copper Removal Mechanisms during CMP,” Journal of The Electrochemical Society, 151 (10) G688–G692, (2004)Google Scholar
4 Elmufdi, C.L., Muldowney, G.P., “A Novel Optical Techniq Area in Chemical Mechanical Planarization” Mater. Res. Soc. Symp. Proc. V91, 2006 SpringGoogle Scholar
5 Cook, L.M., “Chemical processes in glass polishing,” J. Non-Cryst. Solids 120 152 (1990).Google Scholar
6 Tripathi, S., “Tribochemical Mechanisms of Copper Chemical Mechanical Planarization (CMP) – Fundamental Investigations and Integrated Modeling”, Ph.D. Dissertation, University of California, Berkeley, December 2008.Google Scholar