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Integrated GaN/AlGaN/GaN HEMTs with Preciously Controlled Resistance on Silicon Substrate Fabricated by Ion Implantation

Published online by Cambridge University Press:  01 February 2011

Kazuki Nomoto ,
Tomo Ohsawa ,
Masataka Satoh  and
Tohru Nakamura
Kazuki Nomoto
Affiliation:
[email protected], Hosei Univ., EECE, 3-11-15, Midoricho, Koganei, Tokyo, 1840004, Japan, +81-42-387-5104, +81-42-387-5121
Tomo Ohsawa
Affiliation:
[email protected], Hosei University, Department of EECE and Research Center for Micro-Nano Technology, Tokyo, 1840003, Japan
Masataka Satoh
Affiliation:
[email protected], Hosei University, Department of EECE and Research Center for Micro-Nano Technology, Tokyo, 1840003, Japan
Tohru Nakamura
Affiliation:
[email protected], Hosei University, Department of EECE and Research Center for Micro-Nano Technology, Tokyo, 1840003, Japan
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Abstract

Multiple ion-implanted GaN/AlGaN/GaN high electron-mobility transistors (HEMTs) and preciously controlled ion-implanted resistors integrated on silicon substrate are reported. Using ion implantation into source/drain (S/D) regions, the performances were significantly improved. On-resistance reduced from 10.3 to 3.5 Ω•mm. Saturation drain current and maximum transconductance increased from 390 to 650 mA/mm and from 130 to 230 mS/mm. Measured transfer curve shows that I/O gain of 4.5 can be obtained at Vdd = 10 V.

Keywords

III-Vdevicesion-implantation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1068: Symposium C – Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates , 2008 , 1068-C03-06
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

[1] Saito, Wataru, Kuraguchi, Nasahiko, Takada, Yoshiharu, Tsuda, Kunio, Omura, Ichiro, and Ogura, Tsuneo, “High Breakdown Voltage Undoped AlGaN-GaN Power HEMT on Sapphire Substrate and Its Demonstration for DC-DC Converter Application”, IEEE Transaction on Electron Devices Vol. 51, No. 11, pp.1913–1917, 2004.Google Scholar
[2] Kumar, Vipan, Kim, D. H., A., Basu and I., Adesida “0.25 μm Self-Aligned AlGaN/GaN High Electron Mobility Transistors”, IEEE Electron Device Letters Vol. 29, No. 1, pp.18–20, 2008.Google Scholar
[3] Joshin, Kazukiyo and Kikkawa, Toshihide, “High-Power and High-Efficiency GaN HEMT Amplifiers”, Radio and Wireless Symposium, 2008 IEEE, 22–24 Jan. 2008 Page(s):65-68Google Scholar
[4] Eduardo, M. Chumbes, A. T. Schremer, Joseph Smart, A. Wang, Y. MacDonald, Noel C., Hogue, D. Komiak, James J., Lichwalla, Stephen J., Leoni, Robert E. III, and Shealy, James R., “AlGaN/GaN High Electron Mobility Transistors on Si(111) Substrates”, IEEE Transaction on Electron Devices Vol. 48, No. 3, pp.420–426, 2001.Google Scholar
[5] Jia, Shuo, Dikme, Yilmaz, Wang, Deliang, Chen, Kevin J., Lau, Kei May, and Heuken, Michael, “AlGaN-GaN HEMTs on Patterned Silicon (111) Substrate”, IEEE Electron Device Letters Vol. 26, No. 3, pp.130–132, 2005.Google Scholar
[6] Chul Choi, Young, Pophristic, Milan, Cha, Ho-Young, Peres, Boris, Spencer, Michael G., and Eastman, Lester F., “The Effect of an Fe-doped GaN Buffer on OFF-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate”, IEEE Transaction on Electron Devices Vol. 53, No. 12, pp.2926–2931, 2006.Google Scholar
[7] Yu, Mark, Ward, Robert J., and Hegazi, Gamal M., “High Power RF Switch MMICs Development in GaN-on-Si HFET Technology”, Radio and Wireless Symposium, 2008 IEEE, 22-24 Jan. 2008 Page(s):855–858 Google Scholar
[8] Ronning, C., Carlson, E. P. and Davis, R. F., “Ion Implantation into Gallium Nitride”, Physics Reports vol. 351, pp. 349–385, 2001.Google Scholar