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In-Situ Study of the Oxide Mediated Epitaxy of CoSi2 on Si

Published online by Cambridge University Press:  10 February 2011

M. W. Kleinschmit ,
M. Yeadon  and
J. M. Gibson
M. W. Kleinschmit
Affiliation:
Department of Physics, University of Illinois at Urbana-Champaign, Urbana, IL 61801
M. Yeadon
Affiliation:
Institute of Materials Research and Engineering, Singapore 119260 and Department of Materials Science, University of Illinois at Urbana-Champaign, Urbana, IL 61801
J. M. Gibson
Affiliation:
Materials Research Division, Argonne National Laboratories, Argonne, IL 60439 and Departments of Physics and Materials Science, University of Illinois at Urbana-Champaign, Urbana, IL 61801
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Abstract

Oxide Mediated Epitaxy (OME) shows promise as a method to form good quality, thin epitaxial CoSi2 films on most Si surfaces. We have performed an in-situ study of the OME of CoSi2, on the Si (001) surface. Our work was carried out with our specially modified ultra-high vacuum transmission electron microscope (UHV TEM) SHEBA (Surface High Energy Electron Beam Apparatus). With SHEBA we were able to monitor the diffraction pattern and therefore the phase formation throughout the anneal. Our results confirm the suppression of intermediate phases during CoSi2 formation in the OME process. We also see a difference in the as deposited Co film when the oxide coated silicon surface is used rather than a clean substrate. From combined imaging and diffraction studies we will shed some light on the mechanism behind the success of OME.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 135
Copyright
Copyright © Materials Research Society 1999

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