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In-Situ Spectroscopic Ellipsometry for the Control of Si based Thin Multi-Layers Grown by UHV-CVD

Published online by Cambridge University Press:  22 February 2011

F. Glowacki ,
A. Larre ,
F. Ferrieu ,
Y. Campidelli  and
D. Bensahel
F. Glowacki
Affiliation:
France Telecom, CNET-CNS, BP 98, 38243, Meylan-Cedex, France
A. Larre
Affiliation:
IEF, URA 22 CNRS, Universitµ Paris XI, Bat. 220, 91405, Orsay, France
F. Ferrieu
Affiliation:
France Telecom, CNET-CNS, BP 98, 38243, Meylan-Cedex, France
Y. Campidelli
Affiliation:
France Telecom, CNET-CNS, BP 98, 38243, Meylan-Cedex, France
D. Bensahel
Affiliation:
France Telecom, CNET-CNS, BP 98, 38243, Meylan-Cedex, France
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Abstract

In-situ Spectroscopic Ellipsometry as a function of time is used to follow the growth of Si/SiGe Multi Quantum Well (MQW) structures. It provides both the starting surface control and the growth parameters understanding (thickness, growth rate, Ge content). Si and SiGe optical data were recorded at different temperatures on individual Si and SiGe layers. Using the measured indices and the known thicknesses of the layers, the experimental MQW data are fitted without adjustable parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 69
Copyright
Copyright © Materials Research Society 1994

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References

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