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In-situ Infrared Absorption Monitoring of Atomic Layer Deposition of Metal Oxides on Functionalized Si and Ge Surfaces

Published online by Cambridge University Press:  01 February 2011

Min Dai ,
Jinhee Kwon ,
Ming-Tsung Ho ,
Yu Wang ,
Sandrine Rivillon ,
Meng Li ,
Yves Jean Chabal  and
Marek Boleslawski
Min Dai
Affiliation:
[email protected], Rutgers University, Chemistry and Chemical Biology, Laboratory for Surface Modification, 136 Frelinghuysen Road, Piscataway, NJ, 08854, United States
Jinhee Kwon
Affiliation:
[email protected], Rutgers University, Physics and Astronomy, Laboratory for Surface Modification, 136 Frelinghuysen Road, Piscataway, NJ, 08854, United States
Ming-Tsung Ho
Affiliation:
[email protected], Rutgers University, Physics and Astronomy, Laboratory for Surface Modification, 136 Frelinghuysen Road, Piscataway, NJ, 08854, United States
Yu Wang
Affiliation:
[email protected], Rutgers University, Physics and Astronomy, Laboratory for Surface Modification, 136 Frelinghuysen Road, Piscataway, NJ, 08854, United States
Sandrine Rivillon
Affiliation:
[email protected], Rutgers University, Chemistry and Chemical Biology, Laboratory for Surface Modification, 136 Frelinghuysen Road, Piscataway, NJ, 08854, United States
Meng Li
Affiliation:
[email protected], Rutgers University, Physics and Astronomy, Laboratory for Surface Modification, 136 Frelinghuysen Road, Piscataway, NJ, 08854, United States
Yves Jean Chabal
Affiliation:
[email protected], Rutgers University, Chemistry and Chemical Biology, Laboratory for Surface Modification, 136 Frelinghuysen Road, Piscataway, NJ, 08854, United States, (732) 445-8248, (732) 445-4991
Marek Boleslawski
Affiliation:
[email protected], SAFC Hitech, 5485 County Road V, Sheboygan Falls, WI, 53085, United States
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Abstract

The nature of the interface between Si and Ge substrates and high-k dielectrics often controls the performance of MOSFET devices. Precleaning and/or chemical functionalization of the surfaces can dramatically affect the formation of an interfacial layer. We have used in-situ IR spectroscopy to probe the relevant interfaces during ALD growth for a variety of surface treatments, including H- and Cl-termination, and nitridation. This paper focuses on understanding of the mechanisms for interfacial SiO2 (or GeOx) formation during HfO2 growth using tetrakis-ethylmethylamidohafnium (TEMAH) as the metal precursor and water or ozone as the oxygen precursor. We find that impurities arising from incomplete ligand elimination during growth (e.g. OH for H2O processing and CO- and NO-containing species for O3 processing) are incorporated into the HfO2 film during growth. Upon annealing, most of these species react, but can also migrate to the interface. Nitridation of Si and Ge surfaces will in general prevent SiO2 or GeOx formation but can also affect the growth rate.

Keywords

atomic layer depositionHfSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 996: Symposium H – Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies , 2007 , 0996-H07-04
Copyright
Copyright © Materials Research Society 2007

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