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Initial Oxidation of MBE-Grown Si Surfaces

Published online by Cambridge University Press:  22 February 2011

T. Igarashi
Affiliation:
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4–6–1 Komaba, Meguro-ku, Tokyo 153, Japan
H. Yaguchi
Affiliation:
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4–6–1 Komaba, Meguro-ku, Tokyo 153, Japan
K. Fujita
Affiliation:
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4–6–1 Komaba, Meguro-ku, Tokyo 153, Japan
S. Fukatsu
Affiliation:
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4–6–1 Komaba, Meguro-ku, Tokyo 153, Japan
Y. Shiraki
Affiliation:
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4–6–1 Komaba, Meguro-ku, Tokyo 153, Japan
R. Ito
Affiliation:
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4–6–1 Komaba, Meguro-ku, Tokyo 153, Japan
T. Hattori
Affiliation:
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4–6–1 Komaba, Meguro-ku, Tokyo 153, Japan
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Extract

We investigated the initial oxidation of MBE-grown Si (100) surfaces with atomic flatness using x-ray photoemission spectroscopy (XPS) and reflection high energy electron diffraction (RHEED). It was found that the MBE-grown surfaces are inert and hardly oxidized even after exposure to molecular oxygen up to 1500 Langmuir (L) at room temperature. At elevated temperatures, the surface oxidation was substantially promoted. On the contrary, the surface oxidation was found to be substantiated on a deliberately corrugated Si surface prepared by low temperature MBE growth, even at room temperature.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

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