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The Influence of Ti Capping Layers on CoSi2 Formation in the Presence of Interfacial Oxide

Published online by Cambridge University Press:  10 February 2011

C. Detavernier ,
R. A. Donaton ,
K. Maex ,
S. Jin ,
H. Bender ,
R. Van Meirhaeghe  and
F. Cardon
C. Detavernier
Affiliation:
Laboratorium voor Kristallografie en Studie van de Vaste Stof, Universiteit Gent, Krijgslaan 281/S 1, B-9000 Gent, Belgium
R. A. Donaton
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
K. Maex
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium INSYS, Katholieke Universiteit Leuven, B-3001 Leuven, Belgium
S. Jin
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
H. Bender
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
R. Van Meirhaeghe
Affiliation:
Laboratorium voor Kristallografie en Studie van de Vaste Stof, Universiteit Gent, Krijgslaan 281/S 1, B-9000 Gent, Belgium
F. Cardon
Affiliation:
Laboratorium voor Kristallografie en Studie van de Vaste Stof, Universiteit Gent, Krijgslaan 281/S 1, B-9000 Gent, Belgium
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Abstract

In this work, we will show that a reactive Ti capping layer can reduce oxide layers that are present at the cobalt-silicon interface. We have used a thin, chemically grown oxide to have a well-controlled form of interfacial oxide layer. To study the silicidation reaction, isochronal annealing was done at various temperatures. Different sets of samples were made in order to investigate the influence of the thickness of the Co layer and its Ti cap. Titanium capping strongly influenced the silicidation reaction. We have found that already at moderate temperatures, Ti can diffuse towards the Co/Si interface, and can reduce the interfacial oxide there present, enabling CoSi2 formation. The CoSi2 thus formed has a preferential epitaxial orientation, and the process by which this epitaxy is attained may be explained by a combination of OME (Oxide Mediated Epitaxy) and TIME (Titanium Mediated Epitaxy).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 139
Copyright
Copyright © Materials Research Society 1999

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References

1. Gambino, J.P., Colgan, E.G., Mat. Chem. & Phys. 52, 99 (1998).10.1016/S0254-0584(98)80014-XGoogle Scholar
2. Besser, P.R., Lauwers, A., Roelandts, N., Maex, K., Blum, W., Alvis, R., Stucchi, M., and de Potter, M., Mat. Res. Soc. Symp. Proc. 514, 375 (1998).Google Scholar
3. Detavernier, C., Van Meirhaeghe, R., Cardon, F., Donaton, R.A., Maex, K., to be published in MicroElectr. Eng.Google Scholar
4. Ishizaka, A. and Shiraki, Y., J. Electrochem. Soc. 133, 666 (1986).10.1149/1.2108651Google Scholar
5. Lawrence, M., Dass, A., Fraser, D.B., and Wei, C.S., Appl. Phys. Lett. 58, 1308 (1991).Google Scholar
6. Tung, R.T., Appl. Phys. Lett. 68 3461 (1996).10.1063/1.115793Google Scholar