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Influence of Ta2O5, TiO2, and ZrO2 Interfacial Layers on Structural and Electrical Properties of Laser Ablated Ba0.5Sr0.5TiO3 Thin Films

Published online by Cambridge University Press:  11 February 2011

Suprem R. Das
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR 00931–3343
Rasmi R. Das
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR 00931–3343
P. Bhattacharya
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR 00931–3343
Ram S. Katiyar
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR 00931–3343
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Abstract

Pulsed laser deposition technique was used to fabricate Ba0.5Sr0.5TiO 3 (BST) thin-films on Pt/TiO 2/SiO2/Si substrates. The influence of thin interfacial layers of Ta2O5, TiO2, and ZrO2, on the structural and electrical properties of BST thin films was investigated. Insertion of interfacial layers does not affect the perovskite phase formation of BST thin films. Buffer layers helped to make uniform distribution of grains and resulted in a relative increase in the average grain size. The dielectric tunability of BST thin films was reduced with the presence of buffer layers. A BST thin film having a dielectric permitivity of 470 reduced to 337, 235 and 233 in the presence of Ta2O5, TiO2, and ZrO2 layers, respectively. The reduction of the relative dielectric permittivity of BST films with the insertion of interfacial layers was explained in terms of a series capacitance effect, due to the low dielectric constant of interfacial layers. The TiO2 layer did not show any appreciable change in the leakage current density. Deposition of thin Ta2O5 and ZrO2 interfacial layer on top of Pt reduced the leakage current density by an order of magnitude.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Kingon, I., Maria, J. P., and Streiffer, S. K., Nature 406, 1032, (2000).Google Scholar
2. Kotecki, D. E., Baniecki, J. D., Shen, H., Laibowitz, R. B., Saenger, K. L., Lian, J. J., Shaw, T. M., Athavale, S. D., Cabral, C. Jr, Duncombe, P. R., Gutsche, M., Kunkel, G., Park, Y. –J., Wang, Y. –Y., and Wise, R., IBM J. Res. Develop. 43, 367, (1999).Google Scholar
3. Scott, J. F., Annu. Rev. Mater. Sci. 28, 79, (1998).Google Scholar
4. Li, Hao, Roytburd, A. L., Alpay, S. P., Tran, T. D., Riba, L. S., and Ramesh, R., Appl. Phys. Lett. 78, 2354, (2001).Google Scholar
5. Dietz, G. W., Schumacher, M., Waser, R., Streiffer, S. K., Basceri, C., and Kingon, A. I., J. Appl. Phys. 82, 2359, (1997).Google Scholar
6. Zafar, S., Jones, R. E., Jiang, Bo, White, Bruce, Kaushik, V., and Gillespie, S., Appl. Phys. Lett. 73, 3533, (1998).Google Scholar
7. Jia, Q. X., Park, B. H., Gibbons, B. J., Huang, J. Y., and Lu, P., Appl. Phys. Lett. 81, 114, 2002 Google Scholar
8. Ahn, K. H., Baik, Sunggi, and Kim, S. S., J. Appl. Phys. 92, 2651, (2002).Google Scholar
9. Nagaraj, , Sawhney, T., Perusse, S., Aggarwal, S., Ramesh, R., Kaushik, V. S., Zafar, S., Jones, R. E., Lee, J. –H., Balu, V., and Lee, J., Appl. Phys. Lett. 74, 3194, (1999).Google Scholar
10. Ahn, J. H., Lee, W. J., and Kim, H. G., Jpn. J. Appl. Phys. 37, 6472, 1998.Google Scholar
11. Kim, S. H., Kim, D. J., Maria, J. P., Kingon, A. I., Streiffer, S. K., Im, J., Auciello, O., and Krauss, A. R., Appl. Phys. Lett. 76, 496, (2000).Google Scholar
12. James, R. and Xi, X. X., J. Appl. Phys. 92, 6149, (2002).Google Scholar
13. Choi, Y. C., Lee, J., and Lee, B. S., Jpn. J. Appl. Phys. 36, 6824, (1997).Google Scholar
14. Lin, Y. B., and Lee, Joseph Ya-min, J. Appl. Phys. 87, 1841, (2000).Google Scholar
15. Chang, S. T. and Lee, Joseph Ya-min, Appl. Phys. Lett., 80, 655, (2002).Google Scholar
16. Hwang, S., Lee, B. T., Kang, C. S., Kim, J. W., Lee, K. H., Cho, H. J., Horii, H., Kim, W. D., Lee, S. I., and Roh, Y. B., J. Appl. Phys., 83, 3703, (1998).Google Scholar