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Influence of H2 on Ge Surface Segregation in Si/SiGe Heterostructures Grown by RTP/VLP-CVD
Published online by Cambridge University Press: 22 February 2011
Abstract
In this paper we report the influence of H2 on Ge surface segregation in Si/SiGe heterostructures. The sample were grown on Si(001) substrate tinder different gas flow of H2 by RTP/VLP-CVD. Auger electron energy spectroscopy(AES) has been used to determine the Ge distribution in Si/SiGe heterostructures. The results indicate that H2 can strongly alter the mechanism of Ge surface segregation and change the distribution of Ge atoms.
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- Copyright © Materials Research Society 1994
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