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Influence of H2 on Ge Surface Segregation in Si/SiGe Heterostructures Grown by RTP/VLP-CVD

Published online by Cambridge University Press:  22 February 2011

Zhang Rong
Affiliation:
Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, CHINA
Huang Hongbin
Affiliation:
Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, CHINA
Gu Shulin
Affiliation:
Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, CHINA
Yang Kai
Affiliation:
Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, CHINA
Shi Yi
Affiliation:
Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, CHINA
Wang Ronghua
Affiliation:
Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, CHINA
Zheng Youdou
Affiliation:
Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, CHINA
Feng Duan
Affiliation:
Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, CHINA
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Abstract

In this paper we report the influence of H2 on Ge surface segregation in Si/SiGe heterostructures. The sample were grown on Si(001) substrate tinder different gas flow of H2 by RTP/VLP-CVD. Auger electron energy spectroscopy(AES) has been used to determine the Ge distribution in Si/SiGe heterostructures. The results indicate that H2 can strongly alter the mechanism of Ge surface segregation and change the distribution of Ge atoms.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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