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The Influence of Grain Structure on the Reliability of Narrow Al-Based Interconnects

Published online by Cambridge University Press:  15 February 2011

S.H. Kang ,
C. Kim ,
F.Y. Génin  and
J.W. Morris Jr.
S.H. Kang
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory and the Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
C. Kim
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory and the Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
F.Y. Génin
Affiliation:
Chemistry and Materials Science, Lawrence Livermore National Laboratory, Livermore, CA 94550
J.W. Morris Jr.
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory and the Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
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Abstract

The work reported here concerns the effect of grain structure on electromigration failure in pure Al and Al-2wt.%Cu-lwt.%Si lines. The grain structures of fine lines were controlled by annealing after patterning to promote the formation of "bamboo" structures. Significant improvements in the median time to failure (MTF) and the deviation of the time to failure (DTF) were observed with the development of near-bamboo structures with polygranular-segment lengths shorter than ~ 5 μm. The most common failure sites are voids or slits across bamboo grains at the upstream ends of polygranular segments. The time-to-failure decreases with the polygranular segment length, and can be significantly enhanced by controlling the grain structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995 , 385
Copyright
Copyright © Materials Research Society 1995

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References

1 Attardo, M.J. and Rosenberg, R., J. Appl. Phys. 41, 2381 (1970).Google Scholar
2 Kim, C., and Morris, J.W. Jr., J. Appl. Phys. 73, 4885 (1993).Google Scholar
3 Miner, B., Atakov, E., Shepela, A., and Bill, S., in Materials Reliability in Microelectronics IV, edited by Børgesen, P., Coburn, J.C., Sanchez, J.E. Jr.., Rodbell, K.P., and Filter, W.F. (Mater. Res. Soc. Proc. 338, Pittsburgh, PA, 1994) pp. 333–338.Google Scholar
4 Agarwala, B.N., Attardo, M.J., and Ingraham, A.P., J. Appl. Phys. 41, 3954 (1970).Google Scholar
5 Kinsbron, E., Appl. Phys. Lett. 36, 968 (1980).Google Scholar
6 Cho, J. and Thompson, C.V., Appl. Phys. Lett. 54, 2577 (1989).Google Scholar
7 Fu, K.Y., J. Appl. Phys. 69, 2656 (1991).Google Scholar
8 Thompson, C.V. and Kahn, H., J. Electron. Mater. 22, 581 (1993).Google Scholar
9 Joo, Y.-C. and Thompson, C.V., in Materials Reliability in Microelectronics IV, edited by Børgesen, P., Coburn, J.C., Sanchez, J.E. Jr., Rodbell, K.P., and Filter, W.F. (Mater. Res. Soc. Proc. 338, Pittsburgh, PA, 1994) pp. 319–324.Google Scholar
10 Lloyd, J.R., pp. 367-372.Google Scholar
11 Kim, C., Kang, S.H., Génin, F.Y., and Morris, J.W. Jr., in this volume.Google Scholar