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In Situ Auger Spectroscopy Investigation of InP Surfaces Treated in RF Hydrogen and Hydrogen/Methane/Argon Plasmas

Published online by Cambridge University Press:  15 February 2011

J. E. Parmeter ,
R. J. Shul  and
P. A. Miller
J. E. Parmeter
Affiliation:
Departments 1126, 1322, and 1128, Sandia National Laboratories, Albuquerque, NM, 87185-0601
R. J. Shul
Affiliation:
Departments 1126, 1322, and 1128, Sandia National Laboratories, Albuquerque, NM, 87185-0601
P. A. Miller
Affiliation:
Departments 1126, 1322, and 1128, Sandia National Laboratories, Albuquerque, NM, 87185-0601
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Abstract

We have used in situ Auger spectroscopic analysis to investigate the composition of InP surfaces cleaned in rf H2 plasmas and etched in rf H2/CH4/Ar plasmas. In general agreement with previous results, hydrogen plasma treatment is found to remove surface carbon and oxygen impurities but also leads to substantial surface phosphorus depletion if not carefully controlled. Low plasma exposure times and rf power settings minimize both phosphorus depletion and surface roughening. Surfaces etched in H2/CH4/Ar plasmas can show severe phosphorus depletion in high density plasmas leading to etch rates of ∼ 700 Å/min, but this effect is greatly reduced in lower density plasmas that produce etch rates of 30–400 Å/min.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 386: Symposium O – Ultraclean Semiconductor Processing Technology and Surface , 1995 , 309
Copyright
Copyright © Materials Research Society 1995

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References

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