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Improving The Barrier Properties of Nickel. Chrome and Nichrome Films on Silicon

Published online by Cambridge University Press:  21 February 2011

Ronald S. Nowicki ,
Louie Arias ,
Chris Rau ,
Ahmad Motamedi ,
David W. Harris  and
Scott Baumann
Ronald S. Nowicki
Affiliation:
Integrated Processing, 722 Kenley Way, Sunnyvale, CA 94087
Louie Arias
Affiliation:
Peak Systems, 3550 W. Warren, Fremont, CA 94538
Chris Rau
Affiliation:
Peak Systems, 3550 W. Warren, Fremont, CA 94538
Ahmad Motamedi
Affiliation:
Peak Systems, 3550 W. Warren, Fremont, CA 94538
David W. Harris
Affiliation:
Hewlett-Packard(CMCD Div.) 350 W.Trimble, San Jose, CA 95131
Scott Baumann
Affiliation:
Charles Evans and Associates 301 Chesapeake Dr., Redwood City, CA 94063
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Abstract

A new technique for improving the diffusion barrier properties of thin, thermallyevaporated nickel, chromium and nichrome films on silicon is described. In this technique, known as “Rapid Thermal Annealing” (RTA), profound differences in the diffusion barrier properties of the films annealed in ammonia ambient at 550-750°C, in comparison to films annealed only in vacuum, were observed. The films annealed in ammonia retained their integrity while the films annealed in vacuum showed diffusion of the silicon into the metal overlayer throughout the entire thickness of the metal in some cases. The film sheet resistance increase for the latter was consistent with the formation of the metal silicide. The possibility of extending this technique to electroplated films used in integrated and hybrid device fabrication is being studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 375
Copyright
Copyright © Materials Research Society 1993

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References

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