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Improved Dielectric Properties of Heterostructured Ba0.5Sr0.5TiO3 Thin Film Composites for Microwave Dielectric Devices

Published online by Cambridge University Press:  11 February 2011

M. Jain ,
S. B. Majumder ,
R. S. Katiyar ,
A. S. Bhalla ,
D. C. Agrawal ,
F. W. Van Keuls ,
F. A. Miranda ,
R. R. Romanofsky  and
C. H. Mueller
M. Jain
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR-00931, USA
S. B. Majumder
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR-00931, USA
R. S. Katiyar
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR-00931, USA
A. S. Bhalla
Affiliation:
Materials Research Center, Pennsylvania State University, University Park, PA 16802, USA
D. C. Agrawal
Affiliation:
Materials Science Program, Indian Institute of Technology, Kanpur U.P., India
F. W. Van Keuls
Affiliation:
Ohio Aerospace Institute, Cleveland, OH 44142, USA
F. A. Miranda
Affiliation:
NASA, Glenn Research Center, Cleveland, OH 44135, USA
R. R. Romanofsky
Affiliation:
NASA, Glenn Research Center, Cleveland, OH 44135, USA
C. H. Mueller
Affiliation:
Analex Corporation, Cleveland, OH-44135, USA
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Abstract

In the present work we have deposited MgO and Ba0.5Sr0.5TiO3 (BST50) thin layers in different sequences to make MgO:BST50 hetero-structured thin films. These films were characterized by X-ray diffraction and found to be highly (100) textured. The figure of merit {(C0-Cv)/(C0.tand)} of the hetero-structured films was found to be higher as compared to pure BST50 films measured at 1 MHz frequency with electric field of 25.3 kV/cm. These films were used to make eight element coupled micro-strip phase shifter and characterized in a frequency range of 13–15 GHz. The high frequency figure of merit (k factor, defined as the ratio of degree of phase shift per dB loss) measured at around 14 GHz with electric field of 333 kV/cm has been markedly improved (around 64.28 °/dB for hetero-structured film as compared to 24.65 °/dB for pure film). Improvement in dielectric properties in a wide frequency range in the MgO:BST are believed to be due to the higher densification of the hetero-structured films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 748: Symposium U – Ferroelectric Thin Films XI , 2002 , U17.4
Copyright
Copyright © Materials Research Society 2003

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References

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