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Improved Defect Classification Techniques of a Laser Scattering Detection System for Post CMP Silicon Dioxide Wafers

Published online by Cambridge University Press:  01 February 2011

Daniel Mateja ,
Toshi Kasai ,
Michael Denham  and
Haresh Siriwardane
Daniel Mateja
Affiliation:
[email protected], Cabot Microelectronics, R&D 870 N. Commons Drive, Aurora IL 60504, United States
Toshi Kasai
Affiliation:
[email protected], Cabot Microelectronics, R&D, 870 N. Commons Drive, Aurora, IL, 60504, United States
Michael Denham
Affiliation:
[email protected], Cabot Microelectronics, R&D, 870 N. Commons Drive, Aurora, IL, 60504, United States
Haresh Siriwardane
Affiliation:
[email protected], Cabot Microelectronics, R&D, 870 N. Commons Drive, Aurora, IL, 60504, United States
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Abstract

A laser light scattering technique was used for the identification of defects on silicon dioxide (SiO2) wafers polished with a tungsten CMP slurry. Defects were then classified as scratches and particles using scanning electron microscopy (SEM). The effects of the incident beam illumination and scattering geometry on the defect detection are examined. Appropriate experimental conditions for selective detection of scratches and particles are discussed in conjunction with the estimated defect count and fractional ratio for specific defect types and sizes. The findings are qualitatively consistent with predicted light scattering distributions simulated from silicon bare substrates.

Keywords

laserdefectsCMP
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 991: Symposium C – Advances and Challenges in Chemical Mechanical Planarization , 2007 , 0991-C09-02
Copyright
Copyright © Materials Research Society 2007

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References

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