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Improved conductivity of ZnO thin films by exposure to an atmospheric hydrogen plasma

Published online by Cambridge University Press:  28 May 2012

A. Illiberi ,
B. Kniknie ,
J. van Deelen ,
H.L.A.H. Steijvers ,
D. Habets ,
P.J.P.M. Simons ,
A.C. Janssen  and
E.H.A. Beckers
A. Illiberi*
Affiliation:
Netherlands Organization for Applied Scientific Research (TNO), PO Box 6235, 5600 HE Eindhoven, The Netherlands
B. Kniknie
Affiliation:
Netherlands Organization for Applied Scientific Research (TNO), PO Box 6235, 5600 HE Eindhoven, The Netherlands
J. van Deelen
Affiliation:
Netherlands Organization for Applied Scientific Research (TNO), PO Box 6235, 5600 HE Eindhoven, The Netherlands
H.L.A.H. Steijvers
Affiliation:
Netherlands Organization for Applied Scientific Research (TNO), PO Box 6235, 5600 HE Eindhoven, The Netherlands
D. Habets
Affiliation:
Netherlands Organization for Applied Scientific Research (TNO), PO Box 6235, 5600 HE Eindhoven, The Netherlands
P.J.P.M. Simons
Affiliation:
Netherlands Organization for Applied Scientific Research (TNO), PO Box 6235, 5600 HE Eindhoven, The Netherlands
A.C. Janssen
Affiliation:
Netherlands Organization for Applied Scientific Research (TNO), PO Box 6235, 5600 HE Eindhoven, The Netherlands
E.H.A. Beckers
Affiliation:
Netherlands Organization for Applied Scientific Research (TNO), PO Box 6235, 5600 HE Eindhoven, The Netherlands
*
*Corresponding author: [email protected]
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Abstract

Aluminum-doped zinc oxide (ZnOx:Al) films have been deposited on a moving glass substrate by a high throughput metalorganic chemical vapor deposition process at atmospheric pressure. Thin (< 250 nm) ZnOx:Al films have a poor crystalline quality, due to a small grain size and the presence of different crystallographic orientations. The crystalline quality improves with increasing film thickness (from 50 nm to 1000 nm), resulting in a lower value of resistivity (from 100 Ohm cm to 1·10-3 Ohm cm, respectively). We have investigated the variation in the films’ conductivity and transparency induced by a post-deposition exposure to a He/H2 atmospheric plasma. The resistivity of thin (< 250 nm) films is found to decreased sharply from 100 Ohm cm to about 4·10-3 Ohm cm by a short (∼ seconds) plasma exposure, while the resistivity of thicker films remains unaffected.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1447: Symposium V – Nanostructured and Advanced Materials for Solar-Cell Manufacturing , 2012 , mrss12-1447-v04-03
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

[1] Granqvist, C.G. Solar Energy Materials and Solar Cells 91, 1529 (2007)Google Scholar
[2] Ellmer, K., Klein, A., Rech, B., Transparent Conductive Zinc Oxide: Basics and Applications in Thin Film Solar Cells, Spring Series in Materials Science 104 (2008)Google Scholar
[3] Hu, J. and Gordon, R.G., Journal of Applied Physics, 71, 880 (1992)Google Scholar
[4] Volintiru, I., Creatore, M., Kniknie, B.J., Spee, C.I.M.A. and van de Sanden, M.C.M., Journal of Applied Physics, 102, 043709 (2007)Google Scholar
[5] Sittinger, V., Ruske, F., Werner, W., Szyszka, B., Rech, B., Hupkes, J., Schope, G., Stiebig, H., Thin Solid Films, 496, 16 (2006)Google Scholar
[6] Major, S., Banerjee, A. and Chopra, K.L., Thin Solid Films, 108, 333 (1983)Google Scholar
[7] Illiberi, A., Roozeboom, F., Poodt, P., ACS Applied Materials and Interfaces 4, 268 (2012)Google Scholar
[8] Illiberi, A., Kniknie, B., van Deelen, J., H Steijvers, H. L. A., Habets, D., Simons, P. J. P. M., Janssen, A. C., Beckers, E. H. A., Solar Energy Materials and Solar Cells 95, 1955, (2011)Google Scholar
[9] Illiberi, A., Simons, P.J.P.M., Kniknie, B., van Deelen, J., Theelen, M., Zeman, M., Tijssen, M., Zijlmans, W., Steijvers, H.L.A.H., Habets, D., Janssen, A.C., Beckers, E.H.A., Journal of Crystal Growth 347, 56 (2012)Google Scholar
[10] Illiberi, A., Kniknie, B., Steijvers, H. L. A. H, Habets, D., Simons, P. J. P. M., Janssen, A. C., Beckers, E. H. A., van Deelen, J. Materials Research Society Symposium Proceedings 1323, 75 (2011)Google Scholar
[11] Ponomarev, M., Sharma, K., Creatore, M., van de Sanden, M.C.M. Journal of Applied Physics (2012), accepted for publication Google Scholar
[12] Liu, P., She, G., Liao, Z., Wang, Y., Wang, Z., Shi, W., Zhang, X., Lee, S., Chen, D., Applied Physics Letters 94, 063120 (2009)Google Scholar
[13] van de Walle, C.G., Physical Review Letters 85, 1012 (2000)Google Scholar
[14] Ohashi, N., Ishigaki, T., Okada, N., Taguchi, H., Sakaguchi, I., Hishita, S., Sekiguchi, T., Haneda, H., Journal of Applied Physics 93, 6386 (2003)Google Scholar
[15] Ozawa, K., Mase, K., Physical Review B 81, 205322–1 (2010)Google Scholar