Hostname: page-component-cd9895bd7-gbm5v Total loading time: 0 Render date: 2024-12-27T02:30:28.218Z Has data issue: false hasContentIssue false
  • English
  • Français

Improved a-Si:H TFT Performance Using a-SixN1-x / a-SixC1-x Stack Dielectrics

Published online by Cambridge University Press:  10 February 2011

G. Lavareda ,
E. Fortunato ,
C. Nunes Carvalho  and
R. Martins
G. Lavareda
Affiliation:
Faculdade de Ciências e Tecnologia - Departamento de Ciência dos Materiais, FCT/UNL Centro de Excelência de Microelectrónica e Optoelectrónica de Processos, CEMOP/UNINOVA Centro de Física Molecular, CFM/UTL. Quinta da Torre, 2825 Monte da Caparica - PORTUGAL
E. Fortunato
Affiliation:
Faculdade de Ciências e Tecnologia - Departamento de Ciência dos Materiais, FCT/UNL Centro de Excelência de Microelectrónica e Optoelectrónica de Processos, CEMOP/UNINOVA Centro de Física Molecular, CFM/UTL. Quinta da Torre, 2825 Monte da Caparica - PORTUGAL
C. Nunes Carvalho
Affiliation:
Faculdade de Ciências e Tecnologia - Departamento de Ciência dos Materiais, FCT/UNL Centro de Excelência de Microelectrónica e Optoelectrónica de Processos, CEMOP/UNINOVA Centro de Física Molecular, CFM/UTL. Quinta da Torre, 2825 Monte da Caparica - PORTUGAL
R. Martins
Affiliation:
Faculdade de Ciências e Tecnologia - Departamento de Ciência dos Materiais, FCT/UNL Centro de Excelência de Microelectrónica e Optoelectrónica de Processos, CEMOP/UNINOVA Centro de Física Molecular, CFM/UTL. Quinta da Torre, 2825 Monte da Caparica - PORTUGAL
Get access

Abstract

In this paper we present a study on the electrical characteristics (conductivity, σ and relative dielectric constant, εr,.) of amorphous silicon nitride (a-SixN1-x) and carbide (a-SixC1-x) films deposited by PECVD, used as dielectric materials in TFT devices, aiming to select the most adequate alloy that lead to improve device performances. Besides that, double stack a-SixN1-x/a-SixC1-x structures were developed and applied as dielectric layers on TFTs, whose performances show to be superior to those ones using single silicon nitride or silicon carbide as dielectric.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 59
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. LeComber, P. G., Spear, W. E. and Ghaith, A., Electron. Lett. 15, 179 (1979).Google Scholar
2. Suzuki, K., Flat Panel Displays Using Amorphous and Microcrystalline Semiconductor Devices in: “Amorphous and Microcrystalline Semiconductor Devices”, Vol I, Artech House, Boston, ed. Kaniki, (1991), p. 77.Google Scholar
3. Madan, A., Shaw, M. P., “The Physics and Applications of Amorphous Semiconductors”, Academic Press (1988), p. 310.Google Scholar
4. Grant, A.R., Persons, P. D., Kwasnick, R. F. and Possin, G. E., Mat. Res. Soc. Symp. Proc, 297, 883 (1993).Google Scholar
5. Van Berkel, C., Amorphous Silicon Thin Film Transistors: Physiscs and Properties in: “Amorphous and Microcrystalline Semiconductor Devices”, Vol II, Artech House, Boston, ed. Kaniki, (1992), p. 421.Google Scholar
6. Lavareda, G., Fortunato, E., Carvalho, C. N., Carrapa, R. and Martins, R., Int. Semicond. Device Res. Symp. Proc. 1, 161 (1993).Google Scholar
7. Lambrecht, Walter, Mat. Res. Soc. Symp. Proc., 339, 565 (1994).Google Scholar
8. Xu, X. and Wagner, S., Phisics and Electronic Properties of Amorphous and Microcrystalline Silicon Alloys in: “Amorphous and Microcrystalline Semiconductor Devices”, Vol II, Artech House, Boston, ed. Kaniki, (1992), p. 118.Google Scholar
9. Kanicki, J., Mat. Res. Soc. Symp. Proc., 219, 363 (1991).Google Scholar