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Hybrid Valence Bands in Strained-Layer Heterostructures grown on Relaxed SiGe Virtual Substrates

Published online by Cambridge University Press:  01 February 2011

Minjoo L. Lee  and
Eugene A. Fitzgerald
Minjoo L. Lee
Affiliation:
Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge, MA 02139, USA
Eugene A. Fitzgerald
Affiliation:
Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge, MA 02139, USA
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Abstract

The use of alternative channel materials such as germanium [1,2] and strained silicon (ε-Si) [3-5] is increasingly being considered as a method for improving the performance of MOSFETs. While ε-Si grown on relaxed Si1-x Gex is drawing closer to widespread commercialization, it is currently believed that almost all of the performance benefit in CMOS implementations will derive from the enhanced mobility of the n -MOSFET [5]. In this paper, we demonstrate that ε-Si p -MOSFETs can be engineered to exhibit mobility enhancements that increase or remain constant as a function of inversion density. We have also designed and fabricated ε-Si / ε-Ge dual-channel p -MOSFETs exhibiting mobility enhancements of 10 times. These p -MOSFETs can be integrated on the same wafers as ε-Si n -MOSFETs, making symmetric-mobility CMOS possible.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 765: Symposium D – CMOS Front-End Materials and Process Technology , 2003 , D4.10/G1.10
Copyright
Copyright © Materials Research Society 2003

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