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Hrem Study of α-Si3N4 Precipitates in Silicon

Published online by Cambridge University Press:  21 February 2011

A. De Veirman ,
D. Broddini ,
J. Van Landuyt ,
W. Skorupa  and
M. Voelskow
A. De Veirman
Affiliation:
University of Antwerp (R.U.C.A.), Groenenborgerlaan 171, B-2020 Antwerpen, Belgium fellow of the National Fund for Scientific Research (11KW)
D. Broddini
Affiliation:
University of Antwerp (R.U.C.A.), Groenenborgerlaan 171, B-2020 Antwerpen, Belgium
J. Van Landuyt
Affiliation:
University of Antwerp (R.U.C.A.), Groenenborgerlaan 171, B-2020 Antwerpen, Belgium
W. Skorupa
Affiliation:
Academy of Sciences of the GDR, Central Institute for Nuclear Research, GDR-8051 Dresden, P.O.B. 19, GDR
M. Voelskow
Affiliation:
Academy of Sciences of the GDR, Central Institute for Nuclear Research, GDR-8051 Dresden, P.O.B. 19, GDR
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Abstract

Nitrogen and also sequential nitrogen/oxygen implantations at an energy of 330 keV result in the formation of α-Si3N4 precipitates below the buried layer. A particular orientation relation between the α-Si3N4 and the Si lattice was established: the basal (00.1) α-Si3N4 plane is parallel to one of the Si {111} planes. Planar defects with (00.1) habit planes have been identified by HREM as stacking faults with a displacement vector of 1/3<10.0>.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 183: Symposium E – High Resolution Electron Microscopy of Defects in Materials , 1990 , 147
Copyright
Copyright © Materials Research Society 1990

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References

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