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Horizontal carbon nanotube interconnects for advanced integrated circuits.

Published online by Cambridge University Press:  17 July 2013

Jean Dijon ,
Nicolo Chiodarelli ,
Adeline Fournier ,
Hanako Okuno  and
Raphael Ramos
Jean Dijon
Affiliation:
CEA LITEN DTNM, 17 rue des Martyrs, 38054 Grenoble cedex 9, France.
Nicolo Chiodarelli
Affiliation:
CEA LITEN DTNM, 17 rue des Martyrs, 38054 Grenoble cedex 9, France.
Adeline Fournier
Affiliation:
CEA LITEN DTNM, 17 rue des Martyrs, 38054 Grenoble cedex 9, France.
Hanako Okuno
Affiliation:
CEA LITEN DTNM, 17 rue des Martyrs, 38054 Grenoble cedex 9, France.
Raphael Ramos
Affiliation:
CEA LITEN DTNM, 17 rue des Martyrs, 38054 Grenoble cedex 9, France.
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Abstract

Horizontal carbon nanotube (CNT) interconnects are fabricated using a novel integration scheme yielding record wall densities >1013 shell/cm2, i.e. close to the density required for implementation in advanced integrated circuits. The CNTs are grown vertically from individual via structure and subsequently flipped onto the horizontal wafer surface. Various electrode designs are then used to produce different geometries of metal-to-tube contact such as side contact or end contact. CNT lines - 50 to 100 nm wide and up to 20 µm long - are realized and electrically characterized. The sum of the contact resistances from both ends of the lines is close to 500 Ω for 100 nm diameter lines which leads to a specific contact resistance of 1.6 10-8 Ω.cm2 per tube. With the developed technology, post-annealing of the contact does not improve the resistance values. Both chromium and palladium are used as contact metal. While contact resistance is equivalent with the two metals, the resistance per unit length of the lines does change and is better with palladium. This dependence is explained using a tunnelling model which shows that statistics of individual tube-metal contact is required to properly model the electrical results. Direct experimental evidences showing that only a part of the CNTs in the bundle is electrically connected are also given. Our best line resistivity achieved is 1.6mΩ.cm which is among the best results published for horizontally aligned CNTs and the only one with a realistic geometry for future VLSI interconnects.

Keywords

Cmicroelectronicselectrical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1559: Symposium AA – Advanced Interconnects for Micro- and Nanoelectronics—Materials, Processes and Reliability , 2013 , mrss13-1559-aa02-01
Copyright
Copyright © Materials Research Society 2013 

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