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High-quality hydrogen-diluted a-SiNx:H films deposited by hot-wire chemical vapor deposition

Published online by Cambridge University Press:  21 March 2011

Fengzhen Liu ,
Lynn Gedvilas ,
Brian Keyes ,
Errol Sanchez ,
Shulin Wang  and
Qi Wang
Fengzhen Liu
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, USA
Lynn Gedvilas
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, USA
Brian Keyes
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, USA
Errol Sanchez
Affiliation:
Applied Materials, Inc., 979 E. Argues Ave., Sunnyvale, CA 94086, USA
Shulin Wang
Affiliation:
Applied Materials, Inc., 979 E. Argues Ave., Sunnyvale, CA 94086, USA
Qi Wang
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, USA
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Abstract

We have studied the effect of H dilution on silicon nitride films deposited by the hot-wire chemical vapor deposition (HWCVD) technique using SiH4, NH3, and H2 gases. We found that H dilution significantly enhances the properties at silicon nitride films. The N content in the film increases by more than 2 times compared to the film without dilution, based on FTIR measurements. As a result, we can achieve high-quality a-SiNx:H films at low substrate temperature using a much lower gas ratio of NH3/SiH4(∼1) compared to a ratio of about 100 for conventional deposition by HWCVD. We also found that dilution decreases the H content in the films. More importantly, diluted SiNx films are conformal. Scanning electron microscopy measurements show a nearly 100% surface coverage over a sharp object. Electric breakdown measurement shows a well-insulated film with more then a few MV/cm for the breakdown field.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A9.23
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCE

1. Masuda, A., Izumi, A., Umemoto, H., and Matsumura, H.. in MRS Spring Meeting 2002. 2002. San Francisco, CA USA: Mat. Res. Soc. Proc.Google Scholar
2. Stannowski, B., Rath, J.K., and Schropp, R.E.I., Thin Solid Films, 2001. 395: p. 339.Google Scholar
3. Osono, S., Uchiyama, Y., Kitazoe, M., Saito, K., Hayama, M., Masuda, A., Izumi, A., and Matsumura, H., Thin Solid Films, 2003. 430: p. 165.Google Scholar
4. Matsumura, H., Thin Solid Films, 2001. 395: p. 1.Google Scholar
5. Waghmare, P.C., Patil, B.S., Kumbhar, A., Dusane, R.O., and Rao, V. Ramgopal, Microelectronic Engineering, 2002. 61–62: p. 625.Google Scholar
6. Matsumura, H., Kikkawa, A., Tsutsumi, T., Masuda, A., Izumi, A., Takahashi, M., Ohtsuk, H., and Moschner, J.D.. in WCPEC3. 2003. Osaka, Japan: WCPEC-3, Osaka, Japan, to be published.Google Scholar
7. Holt, J.K., Goodwin, D.G., Gabor, A.M., Jiang, F., Stavola, M., and Atwater, H.A., Thin Solid Films, 2003. 430: p. 37.Google Scholar
8. Stannowski, B., Rath, J.K., and Schropp, R.E.I., Journal of Applied Physics, 2003. 93(5): p. 2618.Google Scholar
9. Wang, Q., Ward, S., Gedvilas, L., Keyes, B., Sanchez, E., and Wang, S., Appl. Phys. Lett., 2004. 84: p. 338.Google Scholar
10. Nelson, B.P., Crandall, R.S., Iwaniczko, E., Mahan, A.H., Wang, Q., Xu, Y., and Gao, W.. in Amorphous and Heterogeneous Silicon Thin Films: Fundamentals to Devices--1999. 2001. San Francisco, California: Mat. Res. Soc. Proc.Google Scholar
11. Mahan, A.H., Dillon, A.C., Gedvilas, L.M., Williamson, D.L., and Perkins, J.D., J. Appl. Phys., 2003. 94: p. 2360.Google Scholar
12. Umemoto, H., Morimoto, T., Yamawaki, M., Masuda, Y., Masuda, A., and Matsumura, H., Thin Solid Films, 2003. 430: p. 24.Google Scholar
13. Lucovsky, G., Solid State Communications, 1979. 29: p. 571.Google Scholar
14. Umemoto, H., Kongo, K., Miyazaki, T., Kitazoe, M., Horii, K., Umemoto, H., Masuda, A., and Matsumura, H., Journal of Applied Physics, 2000. 88: p. 5437.Google Scholar
15. Umemoto, H., Ohara, K., Morita, D., Nozaki, Y., Masuda, A., and Matsumura, H., Journal of Applied Physics, 2002. 91: p. 1650.Google Scholar