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High Resolution Transmission Electron Microscope Study of UHV Deposited Titanium Thin Films on (001), (III) and (011)Si
Published online by Cambridge University Press: 21 February 2011
Abstract
High resolution transmission electron microscopy has been applied to study the formation of amorphous interlayers by solid-state diffusion in ultrahigh vacuum deposited Ti thin films on (001), (111) and (011)Si
The interface structures of as deposited and annealed samples were examined. The disordered regions at the a-interlayer/c-Si interfaces were found to be most and least extensive in (011) and (111) samples, respectively. Growth behaviors of a-interlayers are described. The amorphization appeared to be initiated at the grain boundaries of Ti thin films. Ti5 Si3 was identified to be the phase formed at the initial stage of the interfacial reactions by HREM in conjunction with the optical diffraction.
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- Copyright © Materials Research Society 1990