Hostname: page-component-f554764f5-sl7kg Total loading time: 0 Render date: 2025-04-10T11:22:21.072Z Has data issue: false hasContentIssue false
  • English
  • Français

High Quality Ultra-Thin Tunneling N2O Oxides Fabricated by Rtp

Published online by Cambridge University Press:  21 February 2011

G. W. Yoon ,
A. B. Joshi ,
J. Kim  and
D. L. Kwong
G. W. Yoon
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer EngineeringThe University of Texas at Austin, Austin, TX 78712
A. B. Joshi
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer EngineeringThe University of Texas at Austin, Austin, TX 78712
J. Kim
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer EngineeringThe University of Texas at Austin, Austin, TX 78712
D. L. Kwong
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer EngineeringThe University of Texas at Austin, Austin, TX 78712
Get access

Abstract

In this paper, a detailed reliability investigation is presented for ultra-thin tunneling (∼50 Å) oxides grown in N2O ambient using rapid thermal processing (RTP). These N2Oss-oxides are compared with oxides of identical thickness grown in O2 ambient by RTP. The reliability investigations include time-dependent dielectric breakdown as well as stress-induced leakage current in MOS capacitors with these gate dielectrics. Results show that ultra-thin N2O-oxides show much improved reliability as compared to oxide grown in O2 ambient.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 291
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Ting, W., Lo, G. Q., Ahn, J., Chu, T. and Kwong, D. L., Proc. IEEE Reliability Phys. Symup., 323 (1991)Google Scholar
2. Lo, G. Q., Ting, W., Ahn, J. and Kwong, D. L., Tech. Dig. Syrup. VLSI Tech., 43 (1991)Google Scholar
3. Olivo, P., Nguyen, T. N., and Ricco, B., IEEE Trans. Electron Dev., ED–35, 2259 (1988)Google Scholar
4. Naruke, K., Taguchi, S., and Wada, M., IEDM Tech. Dig., 424 (1988)Google Scholar
5. Baglee, D. A. and Smayling, M. C., IEDM Tech. Dig., 624 (1985)Google Scholar
6. Aritome, S., Shirota, R., Kirisawa, R., Endoh, T., Nakayama, R., Sakui, K. and Masuoka, F., IEDM Tech. Dig., 111 (1990)Google Scholar
7. Rosenbaum, E., Liu, Z. and Hu, C., IEDM Tech. Dig., 719 (1991)Google Scholar
8. Ahn, J., Kim, J., Lo, G. Q., and Kwong, D. L., Appi. Phys. Lett., 60, 2809 (1992)Google Scholar
9. Sze, S. M., Physics of Semiconductor Devices, 2nd ed., New York, Wiley, 1981 Google Scholar
10. Rofan, R. and Hu, C., IEEE Electron Dev. Lett., EDL–12, 632 (1991)Google Scholar